FGA70N33BTD

FGA70N33BTD 330V, 70A PDP IGBT FGA70N33BTD 330V, 70A PDP IGBT Features High current capability Low saturation voltage: VCE(sat) =1.7V @ IC = 70A High input impedance Fast switching RoHS Compliant Applications PDP System August 2011 tm General Description Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential. C GCE TO-3P Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol Description VCES VGES ICpulse(1)* IC pulse(2)* PD VRRM IF(AV) IFSM Collector to Emitter Voltage Gate to Emitter Voltage Pulsed Collector Current @ TC = 25oC Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation @ TC = 25oC @ TC = 25oC @ TC = 100oC Peak Repetitive Reverse Voltage of Diode Average Rectified Forward Current of diode @ TC = 100oC Non-repetitive Peak Surge Current of diode 60Hz Single Half-Sine wave TJ, Tstg TL Operating Junction Temperature and Storage Temperrature Maximum Lead Temp. for soldering Purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC(IGBT) RθJC(Diode) RθJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Notes: 1: Repetitive test , Pulse width=100usec , Duty=0.1 2: Half Sine Wave, D< 0.01, pluse width < 5usec *IC_pulse limited by max Tj ©2011 Fairchild Semiconductor Corporation FGA70N33BT...