CoolMOSTM Power Transistor
Features • New revolutionary high voltage technology • Extreme dv/dt rated • High peak curren...
CoolMOSTM Power
Transistor
Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances
Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ
SPI08N80C3
800 V 0.65 Ω 45 nC
PG-TO262-3
CoolMOSTM 800V designed for: Industrial application with high DC bulk voltage Switching Application ( i.e. active clamp forward )
Type SPI08N80C3
Package PG-TO262-3
Marking 08N80C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
Pulsed drain current2)
I D,pulse
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
2),3) AR
Avalanche
current,
repetitive
t
2),3) AR
MOSFET dv /dt ruggedness
E AS E AR I AR dv /dt
Gate source voltage
V GS
T C=25 °C T C=100 °C T C=25 °C I D=1.6 A, V DD=50 V I D=8 A, V DD=50 V
V DS=0…640 V static
AC (f >1 Hz)
Power dissipation Operating and storage temperature
P tot T C=25 °C T j, T stg
Value 8 5.1 24
340 0.2 8 50 ±20 ±30 104 -55 ... 150
Unit A
mJ
A V/ns V
W °C
Rev. 2.91
page 1
2011-09-27
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4)
Symbol Conditions
IS I S,pulse
T C=25 °C
dv /dt
SPI08N80C3
Value 8 24 4
Unit A
V/ns
Parameter
Symbol Conditions
Therma...