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IPP045N10N3G

Infineon Technologies
Part Number IPP045N10N3G
Manufacturer Infineon Technologies
Description MOSFET
Published Nov 13, 2015
Detailed Description IPP045N10N3G MOSFET OptiMOSª3Power-Transistor,100V Features •N-channel,normallevel •ExcellentgatechargexRDS...
Datasheet PDF File IPP045N10N3G PDF File

IPP045N10N3G
IPP045N10N3G

Overview
IPP045N10N3G MOSFET OptiMOSª3Power-Transistor,100V Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchronousrectification •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 100 V RDS(on),max 4.
5 mΩ ID 137 A TO-220-3 tab Drain Pin 2, Tab Gate Pin 1 Source Pin 3 Type/OrderingCode IPP045N10N3 G Package PG-TO 220-3 Marking 045N10N RelatedLinks - 1) J-STD20 and JESD22 Final Data S...


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