IPB042N10N3 G IPI045N10N3 G IPP045N10N3 G
OptiMOS™3 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO 263) ID
100 V 4.2 mW 100 A
175 °C operating temperature
Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) fo...
