IPB042N10N3G
MOSFET
OptiMOSª3Power-Transistor,100V
Features
•N-channel,normallevel •ExcellentgatechargexRDS...
IPB042N10N3G
MOSFET
OptiMOSª3Power-
Transistor,100V
Features
N-channel,normallevel ExcellentgatechargexRDS(on)product(FOM) Verylowon-resistanceRDS(on) 175°Coperatingtemperature Pb-freeleadplating;RoHScompliant QualifiedaccordingtoJEDEC1)fortargetapplication Idealforhigh-frequencyswitchingandsynchronousrectification Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
100
V
RDS(on),max
4.2
mΩ
ID
137
A
D²PAK
Drain Pin 2, Tab
Gate Pin 1
Source Pin 3
Type/OrderingCode IPB042N10N3 G
Package PG-TO 263-3
Marking 042N10N
RelatedLinks -
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.2.9,2017-07-17
OptiMOSª3Power-
Transistor,100V
IPB042N10N3G
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . ...