BUP41

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUP41 DESCRIPTION ·High Collector Current-IC= 6A ·Low Collector Saturation Voltage - : VCE(sat)= 0.4V(Max)@ IC= 3A, IB= 0.1A ·High Switching Speed ·Complement to Type BUP40 APPLICATIONS ·For audio amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous Collector Power Dissipation PC @ TC=25℃ TJ Junction Temperature Tstg Storage Temperature Range 6A 10 W 150 ℃ -55~150 ℃ isc website：www.iscsemi.cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUP41 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.1A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.1A ICBO Collector Cutoff Current VCB= 40V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 2V hFE-2 DC Current Gain IC= 3A; VCE= 2V fT Current-Gain—Bandwidth Product IC= 1A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V MIN TYP. MAX UNIT 0.4 V 1.4 V 1.0 μA 1.0 μA 100 500 40 120 MHz 25 pF isc website：www.iscsemi.cn 2 ...