Document
MJE15030, 15031
Complementary Power Transistors
Designed for use in high-frequency drivers in audio amplifier applications.
Features:
• Collector-Emitter sustaining voltageVCEO(sus) = 150V (Minimum) - MJE15030, MJE15031.
• DC current gain specified to 8.0 Amperes hFE = 20 (Minimum) at IC = 4.0A.
• TO-220AB compact package.
Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case).
Dimensions Minimum Maximum
A
14.68
15.31
B 9.78 10.42
C 5.01 6.52
D
13.06
14.62
E 3.57 4.07
F 2.42 3.66
G 1.12 1.36
H 0.72 0.96
I 4.22 4.98
J 1.14 1.38
K 2.20 2.97
L 0.33 0.55
M 2.48 2.98
O 3.70 3.90
Dimensions : Millimetres
NPN MJE15030
PNP MJE15031
8.0 Ampere Complementary Silicon
Power Transistors 150 Volts 50 Watts
TO-220
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MJE15030,15031
Complementary Power Transistors
Maximum Ratings
Parameter
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage
Collector Current-Continuous -Peak
Base Current
Total Power Dissipation at TC = 25°C Derate above 25°C
Operating and Storage Junction Temperature Range
Symbol VCEO VCBO VEBO
IC
IB
PD
TJ, TSTG
Rating
150
5.0 8.0 16 2.0 50 0.4 -65 to +150
Thermal Characteristic
Characteristic Thermal Resistance Junction to Case
Symbol Rθjc
Maximum 2.50
Unit
V
A
W W/°C
°C
Unit °C/W
Figure - 1 Power Derating
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MJE15030,15031
Complementary Power Transistors
Electrical Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Minimum
Off Characteristics
Collector-Emitter Sustaining Voltage (1) (IC = 10mA, IB = 0)
VCEO(sus)
150
Maximum
-
Collector Cut off Current (VCE = 150V, IB = 0)
ICEO
-
0.1
Collector Cut off Current (VCB = 150V, IE = 0)
Emitter Cut off Current (VEB = 5.0V, IC = 0)
On Characteristics (1)
DC Current Gain (IC = 0.1A, VCE = 2.0V) (IC = 2.0A, VCE = 2.0V) (IC = 3.0A, VCE = 2.0V) (IC = 4.0A, VCE = 2.0V)
Collector-Emitter Saturation Voltage (IC = 1.0A, IB = 0.1A) Base-Emitter On Voltage (IC = 1.0A, VCE = 2.0V) Dynamic Characteristics
Current Gain-Bandwidth Product (2) (IC = 0.5A, VCE = 10V, f = 1.0MHz)
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%. (2) fT = hFE • ftest.
ICBO IEBO
hFE VCE(sat) VBE(on)
fT
-
-
40 40 40 20
-
30
10
0.5 1.0
-
Unit V mA µA
-
V MHz
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MJE15030,15031
Complementary Power Transistors
Figure - 2 Active Region Safe Operating Area
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure - 2 and Figure - 3 is based on TJ(PK) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(PK) ≤150°C. At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown.
Figure - 3 Reverse Bias Safe Operating Area
Figure - 4 Capacitances
Figure - 5 Small Signal Current Gain
Figure - 6 Current Gain-Bandwidth Product
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MJE15030,15031
Complementary Power Transistors
NPN MJE15030
Figure - 7 DC Current Gain
PNP MJE15031
NPN MJE15030
Figure - 8 “ON” Voltage
PNP MJE15031
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MJE15030,15031
Complementary Power Transistors
Figure - 9 Turn-On Time
Figure - 10 Turn-Off Time
Specifications
IC(av) maximum
(A)
VCEO maximum
(V)
hFE minimum at
IC = 4A
Ptot at 25°C (W)
Package
8 150 20 50 TO-220
Type Part Number
NPN PNP
MJE15030 MJE15031
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MJE15030,15031
Complementary Power Transistors
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