DatasheetsPDF.com

MJE15031 Dataheets PDF



Part Number MJE15031
Manufacturers Multicomp
Logo Multicomp
Description Complementary Power Transistors
Datasheet MJE15031 DatasheetMJE15031 Datasheet (PDF)

MJE15030, 15031 Complementary Power Transistors Designed for use in high-frequency drivers in audio amplifier applications. Features: • Collector-Emitter sustaining voltageVCEO(sus) = 150V (Minimum) - MJE15030, MJE15031. • DC current gain specified to 8.0 Amperes hFE = 20 (Minimum) at IC = 4.0A. • TO-220AB compact package. Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case). Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G .

  MJE15031   MJE15031


Document
MJE15030, 15031 Complementary Power Transistors Designed for use in high-frequency drivers in audio amplifier applications. Features: • Collector-Emitter sustaining voltageVCEO(sus) = 150V (Minimum) - MJE15030, MJE15031. • DC current gain specified to 8.0 Amperes hFE = 20 (Minimum) at IC = 4.0A. • TO-220AB compact package. Pin 1. Base 2. Collector 3. Emitter 4. Collector(Case). Dimensions Minimum Maximum A 14.68 15.31 B 9.78 10.42 C 5.01 6.52 D 13.06 14.62 E 3.57 4.07 F 2.42 3.66 G 1.12 1.36 H 0.72 0.96 I 4.22 4.98 J 1.14 1.38 K 2.20 2.97 L 0.33 0.55 M 2.48 2.98 O 3.70 3.90 Dimensions : Millimetres NPN MJE15030 PNP MJE15031 8.0 Ampere Complementary Silicon Power Transistors 150 Volts 50 Watts TO-220 Page 1 31/05/05 V1.0 MJE15030,15031 Complementary Power Transistors Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous -Peak Base Current Total Power Dissipation at TC = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC IB PD TJ, TSTG Rating 150 5.0 8.0 16 2.0 50 0.4 -65 to +150 Thermal Characteristic Characteristic Thermal Resistance Junction to Case Symbol Rθjc Maximum 2.50 Unit V A W W/°C °C Unit °C/W Figure - 1 Power Derating Page 2 31/05/05 V1.0 MJE15030,15031 Complementary Power Transistors Electrical Characteristics (TC = 25°C unless otherwise noted) Parameter Symbol Minimum Off Characteristics Collector-Emitter Sustaining Voltage (1) (IC = 10mA, IB = 0) VCEO(sus) 150 Maximum - Collector Cut off Current (VCE = 150V, IB = 0) ICEO - 0.1 Collector Cut off Current (VCB = 150V, IE = 0) Emitter Cut off Current (VEB = 5.0V, IC = 0) On Characteristics (1) DC Current Gain (IC = 0.1A, VCE = 2.0V) (IC = 2.0A, VCE = 2.0V) (IC = 3.0A, VCE = 2.0V) (IC = 4.0A, VCE = 2.0V) Collector-Emitter Saturation Voltage (IC = 1.0A, IB = 0.1A) Base-Emitter On Voltage (IC = 1.0A, VCE = 2.0V) Dynamic Characteristics Current Gain-Bandwidth Product (2) (IC = 0.5A, VCE = 10V, f = 1.0MHz) (1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%. (2) fT = hFE • ftest. ICBO IEBO hFE VCE(sat) VBE(on) fT - - 40 40 40 20 - 30 10 0.5 1.0 - Unit V mA µA - V MHz Page 3 31/05/05 V1.0 MJE15030,15031 Complementary Power Transistors Figure - 2 Active Region Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure - 2 and Figure - 3 is based on TJ(PK) = 150°C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(PK) ≤150°C. At high case temperatures, thermal limitation will reduce the power that can be handled to values less than the limitations imposed by second breakdown. Figure - 3 Reverse Bias Safe Operating Area Figure - 4 Capacitances Figure - 5 Small Signal Current Gain Figure - 6 Current Gain-Bandwidth Product Page 4 31/05/05 V1.0 MJE15030,15031 Complementary Power Transistors NPN MJE15030 Figure - 7 DC Current Gain PNP MJE15031 NPN MJE15030 Figure - 8 “ON” Voltage PNP MJE15031 Page 5 31/05/05 V1.0 MJE15030,15031 Complementary Power Transistors Figure - 9 Turn-On Time Figure - 10 Turn-Off Time Specifications IC(av) maximum (A) VCEO maximum (V) hFE minimum at IC = 4A Ptot at 25°C (W) Package 8 150 20 50 TO-220 Type Part Number NPN PNP MJE15030 MJE15031 Page 6 31/05/05 V1.0 MJE15030,15031 Complementary Power Transistors Notes: International Sales Offices: AUSTRALIA – Farnell InOne Tel No: ++ 61 2 9645 8888 Fax No: ++ 61 2 9644 7898 FINLAND – Farnell InOne Tel No: ++ 358 9 560 7780 Fax No: ++ 358 9 345 5411 NETHERLANDS – Farnell InOne Tel No: ++ 31 30 241 7373 Fax No: ++ 31 30 241 7333 SWITZERLAND – Farnell InOne Tel No: ++ 41 1 204 64 64 Fax No: ++ 41 1 204 64 54 AUSTRIA – Farnell InOne Tel No: ++ 43 662 2180 680 Fax No: ++ 43 662 2180 670 BELGIUM – Farnell InOne Tel No: ++ 32 3 475 2810 Fax No: ++ 32 3 227 3648 BRAZIL – Farnell-Newark InOne Tel No: ++ 55 11 4066 9400 Fax No: ++ 55 11 4066 9410 CHINA – Farnell-Newark InOne Tel No: ++86 10 6238 5152 Fax No: ++86 10 6238 5022 DENMARK – Farnell InOne Tel No: ++ 45 44 53 66 44 Fax No: ++ 45 44 53 66 06 ESTONIA – Farnell InOne Tel No: ++ 358 9 560 7780 Fax No: ++ 358 9 345 5411 FRANCE – Farnell InOne Tel No: ++ 33 474 68 99 99 Fax No: ++ 33 474 68 99 90 GERMANY – Farnell InOne Tel No: ++ 49 89 61 39 39 39 Fax No: ++ 49 89 613 59 01 HONG KONG – Farnell-Newark InOne Tel No: ++ 852 2268 9888 Fax No: ++ 852 2268 9899 IRELAND – Farnell InOne Tel No: ++ 353 1 830 9277 Fax No: ++ 353 1 830 9016 ITALY – Farnell InOne Tel No: ++ 39 02 93 995 200 Fax No: ++ 39 02 93 995 300 MALAYSIA – Farnell-Newark InOne Tel No: ++ 60 3 7873 8000 F.


MJE15030 MJE15031 BUP41


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)