SPP07N60CFD

SPP07N60CFD CoolMOSTM Power Transistor Features Intrinsic fast-recovery body diode Extremely low reverse recovery charge Ultra low gate charge Product Summary V DS @Tjmax R DS(on),max ID Extreme dv /dt rated High peak current capability Qualified for industrial grade applications according to JEDEC1) 650 V 0.7 " 6.6 A PG-TO220 CoolMOS CFD designed for: Soft switching PWM Stages LCD & CRT TV Type SPP07N60CFD Package PG-TO220 Marking 07N60CFD Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive2),3) Avalanche current, repetitive2),3) Drain source voltage slope Symbol Conditions ID I D,pulse E AS E AR I AR T C=25 °C T C=100 °C T C=25 °C I D=3.3 A, V DD=50 V I D=6.6 A, V DD=50 V dv /dt I D=6.6 A, V DS=480 V, T j=125°C Reverse diode dv /dt dv /dt Maximum diode commutation speed di /dt I S=6.6 A, V DS=480 V, T j=125 °C Gate source voltage V GS static AC (f >1 Hz) Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg Mounting torque M3 & M3.5 screws Rev. 1.4 page 1 Value 6.6 4.3 17 230 0.5 6.6 80 40 600 ±20 ±30 83 -55 ... 150 60 Unit A mJ A V/ns V/ns A/µs V W °C Ncm 2009-11-27 SPP07N60CFD Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded Soldering temperature, wave soldering only allowed...