IPP80N06S3L-06

OptiMOS®-T2 Power-Transistor Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) 100% Avalanche tested IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 Product Summary V DS R DS(on),max (SMD version) ID 55 V 5.6 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N06S3L-06 IPI80N06S3L-06 IPP80N06S3L-06 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N06L06 3N06L06 3N06L06 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) I D,pulse E AS T C=25 °C I D=40 A Avalanche current, single pulse I AS Gate source voltage3) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 80 80 320 455 80 ±16 136 -55 ... +175 55/175/56 Unit A mJ A V W °C Rev. 1.1 page 1 2007-11-07 IPB80N06S3L-06 IPI80N06S3L-06, IPP80N06S3L-06 Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - 1.1 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area4) - - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics ...