Type
OptiMOSTM Power-Transistor
Features • Optimized for synchronous rectification • 100% avalanche tested • Superior th...
Type
OptiMOSTM Power-
Transistor
Features Optimized for synchronous rectification 100% avalanche tested Superior thermal resistance N-channel, normal level Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21
Product Summary VDS RDS(on),max ID Qoss Qg(0V..10V)
IPB026N06N
60 V 2.6 mW 100 A 65 nC 56 nC
PG-TO263-3
Type IPB026N06N
Package PG-TO263-3
Marking 026N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Value
Unit
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
100 A 100
V GS=10 V, T C=25 °C, R thJA =50K/W
25
Pulsed drain current2)
I D,pulse T C=25 °C
400
Avalanche energy, single pulse3) E AS I D=100 A, R GS=25 W
110 mJ
Gate source voltage
V GS
±20 V
1) J-STD20 and JESD22 2) See figure 3 for more detailed information
3) See figure 13 for more detailed information 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev.2.2
page 1
2012-12-20
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
T A=25 °C, R thJA=50 K/W
Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1
IPB026N06N
Value 136
3.0
-55 ... 175 55/175/56
Unit W
°C
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal c...