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BSC152N10NSFG

Infineon Technologies
Part Number BSC152N10NSFG
Manufacturer Infineon Technologies
Description Power-Transistor
Published Nov 12, 2015
Detailed Description OptiMOS®2 Power-Transistor Features • Very low gate charge for high frequency applications • Optimized for dc-dc convers...
Datasheet PDF File BSC152N10NSFG PDF File

BSC152N10NSFG
BSC152N10NSFG

Overview
OptiMOS®2 Power-Transistor Features • Very low gate charge for high frequency applications • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application BSC152N10NSF G Product Summary V DS R DS(on),max ID 100 V 15.
2 mΩ 63 A PG-TDSON-8 Type BSC152N10NSF G Package PG-TDSON-8 Marking 152N10NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C T C=100 °C T A=25 °C, R thJA=50 K/W2) Pulsed drain current3) Ava...


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