BSC118N10NS G
OptiMOS™2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product ...
BSC118N10NS G
OptiMOS™2 Power-
Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary V DS R DS(on),max ID
100 V 11.8 mΩ 71 A
150 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application
PG-TDSON-8
Ideal for high-frequency switching and synchronous rectification
Halogen-free according to IEC61249-2-21
Type BSC118N10NS G
Package PG-TDSON-8
Marking 118N10NS
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D T C=25 °C T C=100 °C
T A=25 °C, R thJA=45 K/W2)
Pulsed drain current3) Avalanche energy, single pulse Gate source voltage
I D,pulse E AS V GS
T C=25 °C I D=50 A, R GS=25 Ω
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22
Value
71 44
11
280 155 ±20 114 -55 ... 150 55/150/56
Unit A
mJ V W °C
Rev. 1.08
page 1
2009-11-03
Parameter
Symbol Conditions
Thermal characteristics Thermal resistance, junction - case R thJC
Thermal resistance, junction - ambient
R thJA
bottom top minimal footprint 6 cm2 cooling area2)
BSC118N10NS G
min.
Values typ.
Unit max.
- - 1.1 K/W - - 18 - - 62 - - 45
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate ...
