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IPB80N04S3-03 Dataheets PDF



Part Number IPB80N04S3-03
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet IPB80N04S3-03 DatasheetIPB80N04S3-03 Datasheet (PDF)

OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 Product Summary V DS R DS(on),max (SMD version) ID 40 V 3.2 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N04S3-03 IPI80N04S3-03 IPP80N04S3-03 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N0.

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OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100% Avalanche tested IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 Product Summary V DS R DS(on),max (SMD version) ID 40 V 3.2 mΩ 80 A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB80N04S3-03 IPI80N04S3-03 IPP80N04S3-03 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Marking 3N0403 3N0403 3N0403 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=80 A Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 80 80 320 526 ±20 188 -55 ... +175 55/175/56 Unit A mJ V W °C Rev. 1.0 page 1 2007-05-03 IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - 0.8 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area3) - - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 40 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=120 µA 2.1 3.0 4.0 Zero gate voltage drain current I DSS V DS=40 V, V GS=0 V, T j=25 °C - - 1 µA Gate-source leakage current I GSS V DS=40 V, V GS=0 V, T j=125 °C2) V GS=20 V, V DS=0 V - - 100 - 100 nA Drain-source on-state resistance RDS(on) V GS=10 V, I D=80 A - 2.8 3.5 mΩ V GS=10 V, I D=80 A, SMD version - 2.5 3.2 Rev. 1.0 page 2 2007-05-03 Parameter Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage Reverse recovery time2) Symbol Conditions IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 min. Values typ. Unit max. C iss C oss Crss t d(on) tr t d(off) tf V GS=0 V, V DS=25 V, f =1 MHz V DD=20 V, V GS=10 V, I D=80 A, R G=3.5 Ω - 5600 1540 240 25 17 39 14 7300 pF 2000 350 - ns - Q gs - 30 40 nC Q gd V DD=32 V, I D=80 A, Q g V GS=0 to 10 V - 20 35 83 110 V plateau - 5.4 - V IS I S,pulse V SD T C=25 °C V GS=0 V, I F=80 A, T j=25 °C t rr V R=20 V, I F=I S, di F/dt =100 A/µs - - 80 A - - 320 - 1 1.3 V - 46 - ns Reverse recovery charge2) Q rr - 73 - nC 1) Current is limited by bondwire; with an R thJC = 0.8K/W the chip is able to carry 182A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.0 page 3 2007-05-03 1 Power dissipation P tot = f(T C); V GS ≥ 6 V IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 2 Drain current I D = f(T C); V GS ≥ 6 V P tot [W] I D [A] 200 180 160 140 120 100 80 60 40 20 0 0 50 100 150 T C [°C] 3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0; SMD parameter: t p 1000 100 80 60 40 20 0 200 0 50 100 150 T C [°C] 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 101 100 1 µs 10 µs 100 µs 1 ms 100 0.5 10-1 0.1 0.05 I D [A] Z thJC [K/W] 10 0.01 10-2 200 1 0.1 1 10 V DS [V] 100 single pulse 10-3 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] Rev. 1.0 page 4 2007-05-03 I D [A] R DS(on) [mΩ] 5 Typ. output characteristics I D = f(V DS); T j = 25 °C; SMD parameter: V GS 320 10 V 7V 280 240 200 160 120 80 40 0 024 V DS [V] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 320 280 240 200 IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 6 Typ. drain-source on-state resistance R DS(on) = f(I D); T j = 25 °C; SMD parameter: V GS 20 5V 18 5.5 V 6V 6.5 V 6.5 V 16 14 12 6V 10 5.5 V 8 6 7V 5V 4 10 V 2 68 0 80 160 240 320 I D [A] 8 Typ. drain-source on-state resistance R DS(on) = f(T j); I D = 80 A; V GS = 10 V; SMD -55 °C 5 25 °C 175 °C 4 I D [A] R DS(on) [mΩ] 160 3 120 80 2 40 0 2345678 V GS [V] 1 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.0 page 5 2007-05-03 9 Typ. gate threshold voltage V GS(th) = f(T j); V GS = V DS parameter: I D 4 3.5 3 1200 µA 120 µA 2.5 IPB80N04S3-03 IPI80N04S3-03, IPP80N04S3-03 10 Typ. capacitances C = f(V DS); V GS = 0 V; f = 1 MHz 104 Ciss Coss 103 V GS(th) [V] C [pF] 2 1.5 Crss 1 -60 -20 20 60 100 140 180 T j [°C] 102.


BSC016N03LSG IPB80N04S3-03 IPI80N04S3-03


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