SKiiP22NAB12I

SKiiP 22 NAB 12 - SKiiP 22 NAB 12 I Absolute Maximum Ratings Symbol Conditions 1) Inverter & Chopper VCES VGES IC ICM IF = –IC IFM = –ICM Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Theatsink = 25 / 80 °C tp < 1 ms; Theatsink = 25 / 80 °C Bridge Rectifier VRRM ID IFSM I2t Theatsink = 80 °C tp = 10 ms; sin. 180 °, Tj = 25 °C tp = 10 ms; sin. 180 °, Tj = 25 °C Tj Tstg Visol AC, 1 min. Values 1200 ± 20 23 / 15 46 / 30 24 / 17 48 / 34 1500 25 700 2400 – 40 . . . + 150 – 40 . . . + 125 2500 Units V V A A A A V A A A2s °C °C V Characteristics Symbol Conditions 1) IGBT - Inverter & Chopper VCEsat td(on) tr td(off) tf Eon + Eoff Cies Rthjh IC = 15 A Tj = 25 (125) °C VCC = 600 V; VGE = ± 15 V IC = 15 A; Tj = 125 °C Rgon = Rgoff = 82 Ω inductive load VCE = 25 V; VGE = 0 V, 1 MHz per IGBT Diode 2) - Inverter & Chopper VF = VEC VTO rT IRRM Qrr Eoff Rthjh IF = 15 A Tj = 25 (125) °C Tj = 125 °C Tj = 125 °C IF = 15 A, VR = – 600 V diF/dt = – 400 A/µs VGE = 0 V, Tj = 125 °C per diode Diode - Rectifier VF Rthjh IF = 35 A, Tj = 25 °C per diode Temperature Sensor RTS T = 25 / 100 °C Shunts (SKiiP 22 NAB 12 I) Rcs(dc) 5 % 4) Rcs(ac) 1% Mechanical Data M1 Case case to heatsink, SI Units mechanical outline see page B 16 – 8 min. typ. max. Units – 2,5(3,1) 3,0(3,7) V – 55 110 ns – 45 90 ns – 400 600 ns – 70 100 ns – 4,0 – mJ – 1,0 – nF – – 1,4 K/W – 2,0(1,8) 2,5(2,3) V – 1,0 1,2 V – 53 73 mΩ – 16 – A – 2,7 – µC – 0,6 – mJ – – 1,7 K/W – 1,2 – V – – 1,6 ...