D1505

SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1505 DESCRIPTION www.dat·aWshiethet4TuO.co-2m20 package ·Complement to type 2SB1064 ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO VCEO VEBO IC ICM IB PC Tj Tstg Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector TC=25 VALUE 60 50 5 3 4.5 0.5 30 150 -55~150 UNIT V V V A A A W SavantIC Semiconductor Silicon NPN Power Transistors Product Specification 2SD1505 CHARACTERISTICS Tj=25 unless otherwise specified www.datasheet4u.com SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=1mA ,IB=0 V(BR)CBO Collector-base breakdown voltage IC=50µA ,IE=0 V(BR)EBO Emitter-base breakdown voltage IE=50µA ,IC=0 VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A VBEsat Base-emitter saturation voltage IC=2A; IB=0.2A ICBO Collector cut-off current VCB=40V; IE=0 IEBO Emitter cut-off current VEB=4V; IC=0 hFE DC current gain IC=0.5A ; VCE=3V COB Output capacitance IE=0 ; VCB=10V,f=1MHz fT Transition frequency IC=0.5A ; VCE=5V MIN TYP. MAX UNIT 50 V 60 V 5V 1.0 V 1.5 V 1...