Document
OptiMOS® Power-Transistor
Features • N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature • Green package (lead free)
PG-TO263-3-2
• Ultra low Rds(on)
• 100% Avalanche tested
IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11
Product Summary V DS R DS(on),max (SMD version) ID
55 V 10.7 mW 80 A
PG-TO220-3-1
PG-TO262-3-1
Type IPB80N06S2L-11 IPP80N06S2L-11 IPI80N06S2L-11
Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1
Ordering Code Marking SP0002-18177 2N06L11 SP0002-18175 2N06L11 SP0002-18176 2N06L11
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Continuous drain current1)
I D T C=25 °C, V GS=10 V
T C=100 °C, V GS=10 V2)
Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4)
I D,pulse E AS V GS
T C=25 °C I D=80A
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
Value 80
58
320 280 ±20 158 -55 ... +175
Unit A
mJ V W °C
Rev. 1.1
page 1
2010-10-26
IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11
Parameter
Symbol
Conditions
min.
Values typ.
Unit max.
Thermal characteristics2)
Thermal resistance, junction - case R thJC
Thermal resistance, junction ambient, leaded
R thJA
- - 0.95 K/W - - 62
SMD version, device on PCB
R thJA
minimal footprint 6 cm2 cooling area5)
-
- 62 - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D= 1 mA
55
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=93 µA 1.2 1.6 2.0
Zero gate voltage drain current
I DSS
V DS=55 V, V GS=0 V, T j=25 °C
-
0.01
1 µA
V DS=55 V, V GS=0 V, T j=125 °C2)
-
1 100
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
1 100 nA
Drain-source on-state resistance
R DS(on) V GS=4.5 V, I D=40 A
- 10.7 14.7 mW
V GS=4.5 V, I D=40 A, - 10.4 14.4 SMD version
Drain-source on-state resistance
RDS(on) V GS=10 V, I D=40 A,
-
8.7 11.0 mΩ
V GS=10 V, I D=40 A, - 8.4 10.7 SMD version
Rev. 1.1
page 2
2010-10-26
Parameter
Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage
Reverse Diode Diode continous forward current2) Diode pulse current2)
Diode forward voltage
Reverse recovery time2)
Symbol
IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11
Conditions
min.
Values typ.
Unit max.
C iss C oss Crss t d(on) tr t d(off) tf
V GS=0 V, V DS=25 V, f =1 MHz
V DD=30 V, V GS=10 V, I D=80 A, R G=3 W
-
2075 585 197 11 32 46 13
- pF - ns -
Q gs - 7 9 nC
Q gd V DD=44 V, I D=80 A, Q g V GS=0 to 10 V
-
21 30 62 80
V plateau
- 3.6 - V
IS I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=80 A, T j=25 °C
t rr
V R=30 V, I F=I S, di F/dt =100 A/µs
- - 80 A - - 320 - 1 1.3 V
- 54 67 ns
Reverse recovery charge2)
Q rr
- 61 76 nC
1) Current is limited by bondwire; with an R thJC = 0.95K/W the chip is able to carry 83A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos
2) Defined by design. Not subject to production test.
3) See diagram 13
4) Qualified at -20V and +20V. 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.1
page 3
2010-10-26
1 Power dissipation P tot = f(T C); V GS ≥ 4 V
IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11
2 Drain current I D = f(T C); V GS ≥ 10 V
P tot [W] I D [A]
180
160
140
120
100
80
60
40
20
0 0 50 100 T C [°C]
3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0 parameter: t p
1000
150
100
80
60
40
20
0 200 0 50 100 150
T C [°C] 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T
100
0.5
200
I D [A] Z thJC [K/W]
100 10
1 µs 10 µs 100 µs 1 ms
10-1
0.1 0.05
0.01
10-2
single pulse
1 0.1
Rev. 1.1
1 10 V DS [V]
10-3 100 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100
t p [s]
page 4
2010-10-26
5 Typ. output characteristics I D = f(V DS); T j = 25 °C parameter: V GS
300
250
10 V
200
IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11
6 Typ. drain-source on-state resistance R DS(on) = (I D); T j = 25 °C parameter: V GS
15
13 4 V
I D [A] R DS(on) [mW]
I D [A] g fs [S]
150
4V
100
3.5 V
50
3V
0 2.5 V 0246 V DS [V]
7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j
160
8
140
120
100
80
60
40
20
0 1
175 °C 25 °C -55 °C
23 V GS [V]
Rev. 1.1
11
4.5 V
9
10 V
7 10 0 20 40 60 80
I D [A]
8 Typ. Forward transconductance g fs = f(I D); T j = 25°C parameter: g fs
100 120
150
100
50
0 40
page 5
50 100 150 I D [A]
200
2010-10-26
9 Typ. Drain-source on-state resistance R DS(ON) = f(T j) parameter: I D = 40 A; VGS = 10 V
IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11
10 Typ. gate threshold voltage V GS(th) = f(T j); V .