DatasheetsPDF.com

IPP80N06S2L-11 Dataheets PDF



Part Number IPP80N06S2L-11
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet IPP80N06S2L-11 DatasheetIPP80N06S2L-11 Datasheet (PDF)

OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) PG-TO263-3-2 • Ultra low Rds(on) • 100% Avalanche tested IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 Product Summary V DS R DS(on),max (SMD version) ID 55 V 10.7 mW 80 A PG-TO220-3-1 PG-TO262-3-1 Type IPB80N06S2L-11 IPP80N06S2L-11 IPI80N06S2L-11 Package PG-TO263-3-2 PG-TO220-3-1 PG-TO.

  IPP80N06S2L-11   IPP80N06S2L-11


Document
OptiMOS® Power-Transistor Features • N-channel Logic Level - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) PG-TO263-3-2 • Ultra low Rds(on) • 100% Avalanche tested IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 Product Summary V DS R DS(on),max (SMD version) ID 55 V 10.7 mW 80 A PG-TO220-3-1 PG-TO262-3-1 Type IPB80N06S2L-11 IPP80N06S2L-11 IPI80N06S2L-11 Package PG-TO263-3-2 PG-TO220-3-1 PG-TO262-3-1 Ordering Code Marking SP0002-18177 2N06L11 SP0002-18175 2N06L11 SP0002-18176 2N06L11 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current1) I D T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Gate source voltage4) I D,pulse E AS V GS T C=25 °C I D=80A Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg Value 80 58 320 280 ±20 158 -55 ... +175 Unit A mJ V W °C Rev. 1.1 page 1 2010-10-26 IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics2) Thermal resistance, junction - case R thJC Thermal resistance, junction ambient, leaded R thJA - - 0.95 K/W - - 62 SMD version, device on PCB R thJA minimal footprint 6 cm2 cooling area5) - - 62 - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D= 1 mA 55 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=93 µA 1.2 1.6 2.0 Zero gate voltage drain current I DSS V DS=55 V, V GS=0 V, T j=25 °C - 0.01 1 µA V DS=55 V, V GS=0 V, T j=125 °C2) - 1 100 Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=4.5 V, I D=40 A - 10.7 14.7 mW V GS=4.5 V, I D=40 A, - 10.4 14.4 SMD version Drain-source on-state resistance RDS(on) V GS=10 V, I D=40 A, - 8.7 11.0 mΩ V GS=10 V, I D=40 A, - 8.4 10.7 SMD version Rev. 1.1 page 2 2010-10-26 Parameter Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage Reverse recovery time2) Symbol IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 Conditions min. Values typ. Unit max. C iss C oss Crss t d(on) tr t d(off) tf V GS=0 V, V DS=25 V, f =1 MHz V DD=30 V, V GS=10 V, I D=80 A, R G=3 W - 2075 585 197 11 32 46 13 - pF - ns - Q gs - 7 9 nC Q gd V DD=44 V, I D=80 A, Q g V GS=0 to 10 V - 21 30 62 80 V plateau - 3.6 - V IS I S,pulse T C=25 °C V SD V GS=0 V, I F=80 A, T j=25 °C t rr V R=30 V, I F=I S, di F/dt =100 A/µs - - 80 A - - 320 - 1 1.3 V - 54 67 ns Reverse recovery charge2) Q rr - 61 76 nC 1) Current is limited by bondwire; with an R thJC = 0.95K/W the chip is able to carry 83A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos 2) Defined by design. Not subject to production test. 3) See diagram 13 4) Qualified at -20V and +20V. 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.1 page 3 2010-10-26 1 Power dissipation P tot = f(T C); V GS ≥ 4 V IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 2 Drain current I D = f(T C); V GS ≥ 10 V P tot [W] I D [A] 180 160 140 120 100 80 60 40 20 0 0 50 100 T C [°C] 3 Safe operating area I D = f(V DS); T C = 25 °C; D = 0 parameter: t p 1000 150 100 80 60 40 20 0 200 0 50 100 150 T C [°C] 4 Max. transient thermal impedance Z thJC = f(t p) parameter: D =t p/T 100 0.5 200 I D [A] Z thJC [K/W] 100 10 1 µs 10 µs 100 µs 1 ms 10-1 0.1 0.05 0.01 10-2 single pulse 1 0.1 Rev. 1.1 1 10 V DS [V] 10-3 100 10-7 10-6 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2010-10-26 5 Typ. output characteristics I D = f(V DS); T j = 25 °C parameter: V GS 300 250 10 V 200 IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 6 Typ. drain-source on-state resistance R DS(on) = (I D); T j = 25 °C parameter: V GS 15 13 4 V I D [A] R DS(on) [mW] I D [A] g fs [S] 150 4V 100 3.5 V 50 3V 0 2.5 V 0246 V DS [V] 7 Typ. transfer characteristics I D = f(V GS); V DS = 6V parameter: T j 160 8 140 120 100 80 60 40 20 0 1 175 °C 25 °C -55 °C 23 V GS [V] Rev. 1.1 11 4.5 V 9 10 V 7 10 0 20 40 60 80 I D [A] 8 Typ. Forward transconductance g fs = f(I D); T j = 25°C parameter: g fs 100 120 150 100 50 0 40 page 5 50 100 150 I D [A] 200 2010-10-26 9 Typ. Drain-source on-state resistance R DS(ON) = f(T j) parameter: I D = 40 A; VGS = 10 V IPB80N06S2L-11 IPP80N06S2L-11, IPI80N06S2L-11 10 Typ. gate threshold voltage V GS(th) = f(T j); V .


IPB80N06S2L-11 IPP80N06S2L-11 IPI80N06S2L-11


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)