Document
SIPMOS® Power-Transistor
Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead finishing; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101
Product Summary V DS R DS(on),max ID
SPB08P06P G
-60 V 0.3 Ω -8.8 A
PG-TO263-3
Type
Package
SPB08P06PG PG-TO263-3
Tape and reel information 1000 pcs / reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current Pulsed drain current
ID I D,pulse
T A=25 °C T A=100 °C T A=25 °C
Marking Lead free 08P06P Yes
Packing Non dry
Value steady state
-8.8 -6.3 -35.32
Unit A
Avalanche energy, single pulse
E AS I D=8.83 A, R GS=25 Ω
70 mJ
Reverse diode dv /dt
Gate source voltage Power dissipation Operating and storage temperature ESD class
dv /dt
I D=8.83 A, V DS=48 V, di /dt =-200 A/µs, T j,max=175 °C
V GS
P tot T A=25 °C
T j, T stg
Soldering temperature
IEC climatic category; DIN IEC 68-1
-6
±20 42 "-55 ... +175"
kV/µs
V W °C
260 °C 55/150/56
Rev 1.7
page 1
2012-09-07
Parameter
Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
Symbol Conditions
SPB08P06P G
min.
Values typ.
Unit max.
R thJC R thJA R thJA minimal footprint
6 cm2 cooling area1)
-
- 3.6 K/W - 62 - 62 K/W - 40
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=-250 µA
-60
Gate threshold voltage
V GS(th) V DS=V GS, I D=-250 µA -2.1
3
-V -4
Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
I DSS I GSS
V DS=-60 V, V GS=0 V, T j=25 °C
V DS=-60 V, V GS=0 V, T j=150 °C
V GS=-20 V, V DS=0 V
R DS(on) V GS=-10 V, I D=-6.2 A
-
-
-0.1 -1 µA
-10 -100 -10 -100 nA 221 300 mΩ
Transconductance
g fs
|V DS|>2|I D|R DS(on)max, I D=-6.2 A
2.4
4.8
-S
1) Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air.
Rev 1.7
page 2
2012-09-07
Parameter
Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage
Reverse Diode Diode continuous forward current Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
SPB08P06P G
min.
Values typ.
Unit max.
C iss C oss C rss t d(on) tr t d(off) tf
V GS=0 V, V DS=-25 V, f =1 MHz
V DD=-30 V, V GS=10 V, I D=-6.2 A, R G=6 Ω
-
335 420 pF 105 135 65 95 16 24 ns 46 69 48 72 14 21
Q gs Q gd Qg V plateau
V DD=-48 V, I D=-8.8 A, V GS=0 to -10 V
-
-1.9 -2.6 nC -5 -8 -10 -13 -6 - V
IS I S,pulse V SD t rr Q rr
T A=25 °C
V GS=0 V, I F=-8.83 A, T j=25 °C
V R=30 V, I F=|I S|, di F/dt =100 A/µs
-
- -8.8 A - -35.3 -1 -1.55 V 60 90 ns 100 150 nC
Rev 1.7
page 3
2012-09-07
1 Power dissipation P tot=f(T A)
50
2 Drain current I D=f(T A); |V GS|≥10 V
10
SPB08P06P G
40 8
30 6
P tot [W] -I D [A]
20 4
10 2
-I D [A] Z thJS [K/W]
0 0 40 80 T A [°C]
3 Safe operating area I D=f(V DS); T A=25 °C; D =0 parameter: t p
102
101
limited by on-state resistance
100
10-1
120 160
0 0 40 80 120
T A [°C]
4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T
101
10 µs
160
100 µs
1 ms
10 ms 100 ms DC
0.5
100 0.2
0.1
0.05 0.02
0.01
10-1
single pulse
10-5 10-4 10-3 10-2 10-1 100 101 102
10-2 10-1
Rev 1.7
100 101 -V DS [V]
102
page 4
t p [s]
2012-09-07
-I D [A] R DS(on) [mΩ]
5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS
20
-20 V
18
-10 V
16
-7 V
14
12
10
-6 V
8
6 -5.5 V
4 -5 V
2 -4.5 V
-4 V
0 0246 -V DS [V]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
8
SPB08P06P G 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS
1000
900
800
700 -4 V
600
-4.5 V -5 V
500
400
-5.5 V -6 V
300
200
100
-37V
-10 V -20 V
0 8 0 2 4 6 8 10 12 14 16 18
-I D [A]
8 Typ. forward transconductance g fs=f(I D); T j=25 °C
6
5 6
4
-I D [A] g fs [S]
43
2
125 °C 25 °C
0 0123456 -V GS [V]
2
1
0 0 2 4 6 8 10 -I D [A]
Rev 1.7
page 5
2012-09-07
9 Drain-source on-state resistance R DS(on)=f(T j); I D=-6.2 A; V GS=-10 V
SPB08P06P G 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=-250 µA
800 4.5
R DS(on) [mΩ] -V GS(th) [V]
700
600
500
98 %
400
300
typ.
200
100
4 max. 3.5
3 typ.
2.5
min.
2
1.5
1
0.5
0 -60 -20 20 60 100 140 180
T j [°C]
0 -60 -20 20 60 100 140 180
T j [°C]
11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz
12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j
C [pF] I F [A]
175 °C, typ 25 °C, 98%
101 103
175 °C, 98%
Ciss 100
Coss
102
Crss
10-1
25 °C, typ
101 0
Rev 1.7
5 10 15 .