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SPB08P06PG Dataheets PDF



Part Number SPB08P06PG
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet SPB08P06PG DatasheetSPB08P06PG Datasheet (PDF)

SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead finishing; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPB08P06P G -60 V 0.3 Ω -8.8 A PG-TO263-3 Type Package SPB08P06PG PG-TO263-3 Tape and reel information 1000 pcs / reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Co.

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SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead finishing; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPB08P06P G -60 V 0.3 Ω -8.8 A PG-TO263-3 Type Package SPB08P06PG PG-TO263-3 Tape and reel information 1000 pcs / reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=100 °C T A=25 °C Marking Lead free 08P06P Yes Packing Non dry Value steady state -8.8 -6.3 -35.32 Unit A Avalanche energy, single pulse E AS I D=8.83 A, R GS=25 Ω 70 mJ Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature ESD class dv /dt I D=8.83 A, V DS=48 V, di /dt =-200 A/µs, T j,max=175 °C V GS P tot T A=25 °C T j, T stg Soldering temperature IEC climatic category; DIN IEC 68-1 -6 ±20 42 "-55 ... +175" kV/µs V W °C 260 °C 55/150/56 Rev 1.7 page 1 2012-09-07 Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: Symbol Conditions SPB08P06P G min. Values typ. Unit max. R thJC R thJA R thJA minimal footprint 6 cm2 cooling area1) - - 3.6 K/W - 62 - 62 K/W - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 µA -60 Gate threshold voltage V GS(th) V DS=V GS, I D=-250 µA -2.1 3 -V -4 Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance I DSS I GSS V DS=-60 V, V GS=0 V, T j=25 °C V DS=-60 V, V GS=0 V, T j=150 °C V GS=-20 V, V DS=0 V R DS(on) V GS=-10 V, I D=-6.2 A - - -0.1 -1 µA -10 -100 -10 -100 nA 221 300 mΩ Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-6.2 A 2.4 4.8 -S 1) Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. Rev 1.7 page 2 2012-09-07 Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge Symbol Conditions SPB08P06P G min. Values typ. Unit max. C iss C oss C rss t d(on) tr t d(off) tf V GS=0 V, V DS=-25 V, f =1 MHz V DD=-30 V, V GS=10 V, I D=-6.2 A, R G=6 Ω - 335 420 pF 105 135 65 95 16 24 ns 46 69 48 72 14 21 Q gs Q gd Qg V plateau V DD=-48 V, I D=-8.8 A, V GS=0 to -10 V - -1.9 -2.6 nC -5 -8 -10 -13 -6 - V IS I S,pulse V SD t rr Q rr T A=25 °C V GS=0 V, I F=-8.83 A, T j=25 °C V R=30 V, I F=|I S|, di F/dt =100 A/µs - - -8.8 A - -35.3 -1 -1.55 V 60 90 ns 100 150 nC Rev 1.7 page 3 2012-09-07 1 Power dissipation P tot=f(T A) 50 2 Drain current I D=f(T A); |V GS|≥10 V 10 SPB08P06P G 40 8 30 6 P tot [W] -I D [A] 20 4 10 2 -I D [A] Z thJS [K/W] 0 0 40 80 T A [°C] 3 Safe operating area I D=f(V DS); T A=25 °C; D =0 parameter: t p 102 101 limited by on-state resistance 100 10-1 120 160 0 0 40 80 120 T A [°C] 4 Max. transient thermal impedance Z thJA=f(t p) parameter: D =t p/T 101 10 µs 160 100 µs 1 ms 10 ms 100 ms DC 0.5 100 0.2 0.1 0.05 0.02 0.01 10-1 single pulse 10-5 10-4 10-3 10-2 10-1 100 101 102 10-2 10-1 Rev 1.7 100 101 -V DS [V] 102 page 4 t p [s] 2012-09-07 -I D [A] R DS(on) [mΩ] 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 20 -20 V 18 -10 V 16 -7 V 14 12 10 -6 V 8 6 -5.5 V 4 -5 V 2 -4.5 V -4 V 0 0246 -V DS [V] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 8 SPB08P06P G 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 1000 900 800 700 -4 V 600 -4.5 V -5 V 500 400 -5.5 V -6 V 300 200 100 -37V -10 V -20 V 0 8 0 2 4 6 8 10 12 14 16 18 -I D [A] 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 6 5 6 4 -I D [A] g fs [S] 43 2 125 °C 25 °C 0 0123456 -V GS [V] 2 1 0 0 2 4 6 8 10 -I D [A] Rev 1.7 page 5 2012-09-07 9 Drain-source on-state resistance R DS(on)=f(T j); I D=-6.2 A; V GS=-10 V SPB08P06P G 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=-250 µA 800 4.5 R DS(on) [mΩ] -V GS(th) [V] 700 600 500 98 % 400 300 typ. 200 100 4 max. 3.5 3 typ. 2.5 min. 2 1.5 1 0.5 0 -60 -20 20 60 100 140 180 T j [°C] 0 -60 -20 20 60 100 140 180 T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j C [pF] I F [A] 175 °C, typ 25 °C, 98% 101 103 175 °C, 98% Ciss 100 Coss 102 Crss 10-1 25 °C, typ 101 0 Rev 1.7 5 10 15 .


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