SPP08P06P H
SIPMOS® Power-Transistor
Features
Product Summary
· P-Channel · Enhancement mode · Avalanche rated · dv/...
SPP08P06P H
SIPMOS® Power-
Transistor
Features
Product Summary
· P-Channel · Enhancement mode · Avalanche rated · dv/dt rated
Drain source voltage
VDS -60 V
Drain-source on-state resistance RDS(on) 0.3 W
Continuous drain current
ID -8.8 A
· 175°C operating temperature
Pb-free lead plating; RoHS compliant
° Halogen-free according to IEC61249-2-21
° Qualified according to AEC Q101
Type SPP08P06P H
Package PG-TO220-3
Pin 1 PIN 2/4 PIN 3 GDS
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TC = 25 °C TC = 100 °C
ID
Pulsed drain current TC = 25 °C
ID puls
Avalanche energy, single pulse ID = -8.8 A , VDD = -25 V, RGS = 25 W
EAS
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt
EAR dv/dt
IS = -8.8 A, VDS = -48 , di/dt = 200 A/µs, Tjmax = 175 °C
Gate source voltage Power dissipation TC = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1
VGS Ptot
Tj , Tstg
Value
-8.8 -6.2 -35.2
70
4.2 6
±20 42
-55...+175 55/175/56
Unit A
mJ
kV/µs
V W °C
Rev 1.6
Page 1
2011-08-31
SPP08P06P H
Thermal Characteristics Parameter
Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1)
Symbol
Values
Unit
min. typ. max.
RthJC RthJA RthJA
- - 3.6 K/W - - 62
- - 62 - - 40
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
...
