BSC440N10NS3G

$(*'#$%TM3 Power-Transistor Features : % 07*- 5 '!2% # (!0'% &- 0()'( &0% /3% ,# 7!..*)# !2)- ,1 :  .2)+ )8% $ &- 0$ # $ # # - ,4% 01)- , :  # (!,,% * ,- 0+ !**% 4% * :  6# % **% ,2 '!2% # (!0'% 6R DS(on) product (FOM) : % 07*- 5 - , 0% 1)12!,# % R DS(on) :   9 - .% 0!2),' 2% + .% 0!230% :  " &0% % *% !$ .*!2),'  -   # - + .*)!,2 :  3!*)&)% $ !# # - 0$ ),' 2-      1) for target application :  !*- '% , &0% % !# # - 0$ ),' 2-       BSC440N10NS3 G Product Summary VDS RDS(on),max ID 100 V 44 m# 18 A PG-TDSON-8 Type BSC440N10NS3 G Package PG-TDSON-8 Marking 440N10NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C T C=100 °C T A=25 °C, R thJA=50 K/W2) Pulsed drain current3) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=12 A, R GS=25 # Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 Value 18 11 5.3 72 18 ±20 29 -55 ... 150 55/150/56 Unit A mJ V W °C Rev. 2.4 page 1 2009-10-30 Parameter Symbol Conditions Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA 6 cm2 cooling area2) Electrical characteristics, at T j=25 °C, unless otherwise specified BSC440N10NS3 G min. Values typ. Unit max. - - 4.3 K/W - - 50 Static characteristics Drain-source breakdown voltage Gate t...