SIPMOS® Power-Transistor
Features • P-Channel • Enhancement mode • Normal level • Avalanche rated • Pb-free lead plating...
SIPMOS® Power-
Transistor
Features P-Channel Enhancement mode Normal level Avalanche rated Pb-free lead plating; RoHS compliant ° Qualified according to AEC Q101
Product Summary V DS R DS(on),max ID
SPD04P10P G
-100 V 1Ω -4 A
PG-TO252-3
Type
Package
SPD04P10P G PG-TO252-3
Marking 04P10P
Lead free Yes
Packing Non dry
Tape and reel information 1000 pcs / reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous drain current
Symbol Conditions I D T C=25 °C
T C=100 °C
Value -4 -2.8
Unit A
Pulsed drain current
I D,pulse V GS=-10 V, I D=-2.8 A
-16
Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ESD class
E AS I D=-4 A, R GS=25 Ω V GS P tot T C=25 °C T j, T stg
JESD22-A114-HBM
Soldering temperature
IEC climatic category; DIN IEC 68-1
57 ±20 38 -55 ... 175 1A (250 V to 500 V) 260 °C 55/175/56
mJ V W °C
Rev 1.6
page 1
2012-09-10
Parameter
Thermal characteristics
Thermal resistance, junction - soldering point Thermal resistance, junction - ambient
Symbol Conditions
SPD04P10P G
min.
Values typ.
Unit max.
R thJC
R thJA
minimal footprint, steady state
6 cm2 cooling area1), steady state
-
- 3.9 K/W - 75 - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current
Gate-source leakage current
V (BR)DSS V GS=0 V, I D=-250 µA
V GS(th)
V DS=V...
