IPD170N04NG

Type OptiMOS®3 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 100% Avalanche tested Pb-free plating; RoHS compliant Type IPD170N04N G Product Summary V DS R DS(on),max ID IPD170N04N G 40 V 17 mΩ 30 A Package Marking PG-TO252-3 170N04N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse Gate source voltage 1) J-STD20 and JESD22 ID I D,pulse I AS E AS V GS V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C T C=25 °C T C=25 °C I D=30 A, R GS=25 Ω Value 30 23 210 30 5 ±20 Unit A mJ V Rev. 1.0 page 1 2007-12-11 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Power dissipation Operating and storage temperature P tot T C=25 °C T j, T stg IEC climatic category; DIN IEC 68-1 IPD170N04N G Value 31 -55 ... 175 55/175/56 Unit W °C Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm² cooling area4) - - 4.9 K/W - 75 - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source break...