DatasheetsPDF.com

IPA60R250CP Dataheets PDF



Part Number IPA60R250CP
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power Transistor
Datasheet IPA60R250CP DatasheetIPA60R250CP Datasheet (PDF)

CoolMOS® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for: • Hard switching SMPS topologies Product Summary V DS @ Tj,max R DS(on),max@T j= 25°C Q g,typ 6.6 IPA60R250CP 650 V 0.250 Ω 26 nC PG-TO220 FP Type IPA60R250CP Package PG-TO220FP Marking 66RR225909PP Maximum ratings, at T .

  IPA60R250CP   IPA60R250CP



Document
CoolMOS® Power Transistor Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant CoolMOS CP is designed for: • Hard switching SMPS topologies Product Summary V DS @ Tj,max R DS(on),max@T j= 25°C Q g,typ 6.6 IPA60R250CP 650 V 0.250 Ω 26 nC PG-TO220 FP Type IPA60R250CP Package PG-TO220FP Marking 66RR225909PP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current2) Pulsed drain current3) Avalanche energy, single pulse Avalanche energy, repetitive t 3),4) AR Avalanche current, repetitive t 3),4) AR MOSFET dv /dt ruggedness Gate source voltage Power dissipation Operating and storage temperature Mounting torque Symbol Conditions I D T C=25 °C T C=100 °C I D,pulse T C=25 °C E AS E AR I AR dv /dt V GS I D=5.2 A, V DD=50 V I D=5.2 A, V DD=50 V V DS=0...480 V static AC (f >1 Hz) P tot T C=25 °C T j, T stg M2.5 screws Value 12 8 40 345 0.52 5.2 50 ±20 ±30 33 -55 ... 150 50 Unit A mJ A V/ns V W °C Ncm Rev.2.1 page 1 2012-01-09 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current2) Diode pulse current3) Reverse diode dv /dt 5) Symbol Conditions IS I S,pulse T C=25 °C dv /dt IPA60R250CP Value 12 40 15 Unit A V/ns Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient R thJC R thJA Soldering temperature, wavesoldering only allowed at leads T sold leaded 1.6 mm (0.063 in.) from case for 10 s - - 3.75 K/W - - 80 - - 260 °C Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 600 - -V Gate threshold voltage V GS(th) V DS=V GS, I D=0,52 mA 2.5 3 3.5 Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Gate resistance I DSS V DS=600 V, V GS=0 V, T j=25 °C I GSS V DS=600 V, V GS=0 V, T j=150 °C V GS=20 V, V DS=0 V R DS(on) V GS=10 V, I D=7.8 A, T j=25 °C V GS=10 V, I D=7.8 A, T j=150 °C R G f =1 MHz, open drain - - - 1 µA 10 - 100 nA 0.22 0.25 Ω 0.59 1.3 - Ω Rev.2.1 page 2 2012-01-09 Parameter Dynamic characteristics Symbol Conditions IPA60R250CP min. Values typ. Unit max. Input capacitance C iss Output capacitance Effective output capacitance, energy related6) Effective output capacitance, time related7) Turn-on delay time C oss C o(er) C o(tr) t d(on) Rise time tr Turn-off delay time t d(off) Fall time tf V GS=0 V, V DS=100 V, f =1 MHz V GS=0 V, V DS=0 V to 480 V V DD=400 V, V GS=10 V, I D=7.8 A, R G=23.1 Ω - - 1300 65 55 150 40 17 110 12 - pF - - ns - Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Q gs Q gd Qg V plateau V DD.


CDNBS08-SLVU2.8-8 IPA60R250CP HCT7000M


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)