Document
CoolMOS® Power Transistor
Features • Lowest figure-of-merit RONxQg • Ultra low gate charge • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant
CoolMOS CP is designed for: • Hard switching SMPS topologies
Product Summary
V DS @ Tj,max
R DS(on),max@T j= 25°C
Q g,typ
6.6
IPA60R250CP
650 V 0.250 Ω
26 nC
PG-TO220 FP
Type IPA60R250CP
Package PG-TO220FP
Marking 66RR225909PP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous drain current2)
Pulsed drain current3)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
3),4) AR
Avalanche
current,
repetitive
t
3),4) AR
MOSFET dv /dt ruggedness
Gate source voltage
Power dissipation Operating and storage temperature Mounting torque
Symbol Conditions
I D T C=25 °C
T C=100 °C
I D,pulse T C=25 °C
E AS E AR I AR dv /dt V GS
I D=5.2 A, V DD=50 V I D=5.2 A, V DD=50 V
V DS=0...480 V static
AC (f >1 Hz)
P tot T C=25 °C T j, T stg
M2.5 screws
Value 12 8 40 345 0.52 5.2 50 ±20 ±30 33
-55 ... 150 50
Unit A
mJ
A V/ns V
W °C Ncm
Rev.2.1
page 1
2012-01-09
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter Continuous diode forward current2) Diode pulse current3) Reverse diode dv /dt 5)
Symbol Conditions
IS I S,pulse
T C=25 °C
dv /dt
IPA60R250CP
Value 12 40 15
Unit A
V/ns
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ambient
R thJC R thJA
Soldering temperature, wavesoldering only allowed at leads
T sold
leaded
1.6 mm (0.063 in.) from case for 10 s
- - 3.75 K/W - - 80 - - 260 °C
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=0,52 mA 2.5 3 3.5
Zero gate voltage drain current
Gate-source leakage current Drain-source on-state resistance
Gate resistance
I DSS
V DS=600 V, V GS=0 V, T j=25 °C
I GSS
V DS=600 V, V GS=0 V, T j=150 °C
V GS=20 V, V DS=0 V
R DS(on)
V GS=10 V, I D=7.8 A, T j=25 °C
V GS=10 V, I D=7.8 A, T j=150 °C
R G f =1 MHz, open drain
-
-
- 1 µA 10 - 100 nA 0.22 0.25 Ω
0.59 1.3 - Ω
Rev.2.1
page 2
2012-01-09
Parameter Dynamic characteristics
Symbol Conditions
IPA60R250CP
min.
Values typ.
Unit max.
Input capacitance
C iss
Output capacitance
Effective output capacitance, energy related6) Effective output capacitance, time related7)
Turn-on delay time
C oss C o(er) C o(tr) t d(on)
Rise time
tr
Turn-off delay time
t d(off)
Fall time
tf
V GS=0 V, V DS=100 V, f =1 MHz
V GS=0 V, V DS=0 V to 480 V
V DD=400 V, V GS=10 V, I D=7.8 A, R G=23.1 Ω
-
-
1300 65 55
150 40 17 110 12
- pF -
- ns -
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage
Q gs Q gd Qg V plateau
V DD.