MDD4N20Y

MDD4N20Y N-channel MOSFET 200V MDD4N20Y N-Channel MOSFET 200V, 3.0A, 1.35Ω General Description The MDD4N20Y uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDD4N20Y is suitable device for SMPS, high Speed switching and general purpose applications. Features „ VDS = 200V „ ID = 3.0A „ RDS(ON) ≤ 1.35Ω Applications „ Power Supply „ PFC „ LED TV @VGS = 10V @VGS = 10V Absolute Maximum Ratings (Ta = 25oC) Drain-Source Voltage Gate-Source Voltage Characteristics Continuous Drain Current Pulsed Drain Current(1) Power Dissipation Peak Diode Recovery dv/dt(3) Repetitive Pulse Avalanche Energy(4) Avalanche current(1) Single Pulse Avalanche Energy(4) Junction and Storage Temperature Range TC=25oC TC=100oC TC=25oC Derate above 25 oC Thermal Characteristics Characteristics Thermal Resistance, Junction-to-Ambient(1) Thermal Resistance, Junction-to-Case(1) Dec 2011. Version 1.1 1 Symbol VDSS VGSS ID IDM PD Dv/dt EAR IAR EAS TJ, Tstg Symbol RθJA RθJC Rating 200 ±20 3.0 1.9 12 27 0.22 5.5 2.7 2.7 52 -55~150 Unit V V A A A W W/ oC V/ns mJ A mJ oC Rating 110 4.5 Unit oC/W MagnaChip Semiconductor Ltd. MDD4N20Y N-channel MOSFET 200V Ordering Information Part Number MDD4N20YRH Temp. Range -55~150oC Package D-Pak Packing Reel and Tape RoHS Status Halogen Free Electrical Characteristics (Ta =25oC) Characteristics Symbol Static Characteristics Drain-Source Breakdown Voltage Gate Thres...