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B1030 Dataheets PDF



Part Number B1030
Manufacturers Panasonic Semiconductor
Logo Panasonic Semiconductor
Description 2SB1030
Datasheet B1030 DatasheetB1030 Datasheet (PDF)

Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A s Features q Optimum for high-density mounting. q Allowing supply with the radial taping. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to 2SB1030 base voltage 2SB1030A Collector to 2SB1030 emitter voltage 2SB1030A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Sy.

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Transistor 2SB1030, 2SB1030A Silicon PNP epitaxial planer type For low-frequency amplification Complementary to 2SD1423 and 2SD1423A s Features q Optimum for high-density mounting. q Allowing supply with the radial taping. s Absolute Maximum Ratings (Ta=25˚C) Parameter Collector to 2SB1030 base voltage 2SB1030A Collector to 2SB1030 emitter voltage 2SB1030A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg Ratings –30 –60 –25 –50 –7 –1 – 0.5 300 150 –55 ~ +150 Unit V V V A A mW ˚C ˚C 4.0±0.2 Unit: mm 3.0±0.2 15.6±0.5 +0.2 0.45–0.1 0.7±0.1 2.0±0.2 marking 123 1.27 1.27 2.54±0.15 1:Emitter 2:Collector 3:Base EIAJ:SC–72 New S Type Package s Electrical Characteristics (Ta=25˚C) Parameter Collector cutoff current Collector to base 2SB1030 voltage 2SB1030A Collector to emitter 2SB1030 voltage 2SB1030A Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Transition frequency Collector output capacitance Symbol ICBO ICEO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) fT Cob Conditions VCB = –20V, IE = 0 VCE = –20V, IB = 0 IC = –10µA, IE = 0 IC = –2mA, IB = 0 IE = –10µA, IC = 0 VCE = –10V, IC = –150mA*2 VCE = –10V, IC = –500mA*2 IC = –300mA, IB = –30mA*2 VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz *1hFE1 Rank classification Rank Q R hFE1 85 ~ 170 120 ~ 240 S 170 ~ 340 min typ max Unit – 0.1 µA –1 µA –30 V –60 –25 V –50 –7 V 85 340 40 – 0.35 – 0.6 V 200 MHz 6 15 pF *2 Pulse measurement 1 Collector power dissipation PC (mW) Transistor PC — Ta 500 450 400 350 300 250 200 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (˚C) Collector to emitter saturation voltage VCE(sat) (V) –100 –30 –10 VCE(sat) — IC IC/IB=10 –3 –1 – 0.3 – 0.1 Ta=75˚C 25˚C –25˚C – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Collector current IC (A) –10 Cob — VCB 20 IE=0 18 f=1MHz Ta=25˚C 16 14 12 10 8 6 4 2 0 –1 –3 –10 –30 –100 Collector to base voltage VCB (V) Collector output capacitance Cob (pF) Noise voltage NV (mV) Forward current transfer ratio hFE Collector current IC (mA) –1200 –1000 IC — VCE Ta=25˚C –800 –600 –400 –200 IB=–10mA –9mA –8mA –7mA –6mA –5mA –4mA –3mA –2mA –1mA 0 0 –2 –4 –6 –8 –10 –12 Collector to emitter voltage VCE (V) Base to emitter saturation voltage VBE(sat) (V) 2SB1030, 2SB1030A –100 –30 –10 VBE(sat) — IC IC/IB=10 –3 –1 – 0.3 – 0.1 Ta=–25˚C 25˚C 75˚C – 0.03 – 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Collector current IC (A) –10 hFE — IC 600 VCE=–10V 500 400 300 Ta=75˚C 200 25˚C –25˚C 100 0 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3 Collector current IC (A) –10 NV — IC 240 VCE=–10V Ta=25˚C Function=FLAT 200 160 120 80 Rg=100kΩ 22kΩ 40 4.7kΩ 0 –10 –30 –100 –300 –1000 Collector current IC (µA) Transition frequency fT (MHz) fT — IE 160 VCB=–10V Ta=25˚C 140 120 100 80 60 40 20 0 0.1 0.3 1 3 10 30 100 Emitter current IE (mA) 2 .


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