Document
Transistor
2SB1030, 2SB1030A
Silicon PNP epitaxial planer type
For low-frequency amplification Complementary to 2SD1423 and 2SD1423A
s Features
q Optimum for high-density mounting. q Allowing supply with the radial taping.
s Absolute Maximum Ratings (Ta=25˚C)
Parameter Collector to 2SB1030 base voltage 2SB1030A Collector to 2SB1030 emitter voltage 2SB1030A Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
Symbol
VCBO
VCEO
VEBO ICP IC PC Tj Tstg
Ratings –30 –60 –25 –50 –7 –1 – 0.5 300 150
–55 ~ +150
Unit
V
V
V A A mW ˚C ˚C
4.0±0.2
Unit: mm
3.0±0.2
15.6±0.5
+0.2 0.45–0.1 0.7±0.1 2.0±0.2
marking 123
1.27 1.27 2.54±0.15
1:Emitter 2:Collector 3:Base
EIAJ:SC–72 New S Type Package
s Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base 2SB1030
voltage
2SB1030A
Collector to emitter 2SB1030
voltage
2SB1030A
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage Transition frequency Collector output capacitance
Symbol ICBO ICEO
VCBO
VCEO
VEBO hFE1*1 hFE2 VCE(sat) fT Cob
Conditions VCB = –20V, IE = 0 VCE = –20V, IB = 0
IC = –10µA, IE = 0
IC = –2mA, IB = 0
IE = –10µA, IC = 0 VCE = –10V, IC = –150mA*2 VCE = –10V, IC = –500mA*2 IC = –300mA, IB = –30mA*2 VCB = –10V, IE = 50mA, f = 200MHz VCB = –10V, IE = 0, f = 1MHz
*1hFE1 Rank classification
Rank
Q
R
hFE1 85 ~ 170 120 ~ 240
S 170 ~ 340
min typ max Unit
– 0.1 µA
–1 µA
–30 V
–60
–25 V
–50
–7 V
85 340
40
– 0.35 – 0.6
V
200 MHz
6 15 pF
*2 Pulse measurement
1
Collector power dissipation PC (mW)
Transistor
PC — Ta
500 450 400 350 300 250 200 150 100
50 0 0 20 40 60 80 100 120 140 160
Ambient temperature Ta (˚C)
Collector to emitter saturation voltage VCE(sat) (V)
–100 –30 –10
VCE(sat) — IC
IC/IB=10
–3 –1 – 0.3 – 0.1
Ta=75˚C 25˚C –25˚C
– 0.03
– 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
Cob — VCB
20 IE=0
18 f=1MHz Ta=25˚C
16
14
12
10
8
6
4
2
0 –1 –3 –10 –30 –100
Collector to base voltage VCB (V)
Collector output capacitance Cob (pF)
Noise voltage NV (mV)
Forward current transfer ratio hFE
Collector current IC (mA)
–1200 –1000
IC — VCE
Ta=25˚C
–800 –600 –400 –200
IB=–10mA –9mA –8mA –7mA –6mA –5mA –4mA
–3mA –2mA
–1mA
0 0 –2 –4 –6 –8 –10 –12
Collector to emitter voltage VCE (V)
Base to emitter saturation voltage VBE(sat) (V)
2SB1030, 2SB1030A
–100 –30 –10
VBE(sat) — IC
IC/IB=10
–3 –1 – 0.3 – 0.1
Ta=–25˚C 25˚C 75˚C
– 0.03
– 0.01 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
hFE — IC
600 VCE=–10V
500
400
300
Ta=75˚C 200 25˚C
–25˚C
100
0 – 0.01 – 0.03 – 0.1 – 0.3 –1 –3
Collector current IC (A)
–10
NV — IC
240 VCE=–10V Ta=25˚C Function=FLAT
200
160
120
80 Rg=100kΩ
22kΩ 40
4.7kΩ
0 –10 –30 –100 –300 –1000
Collector current IC (µA)
Transition frequency fT (MHz)
fT — IE
160 VCB=–10V Ta=25˚C
140
120
100
80
60
40
20
0 0.1 0.3 1 3 10 30 100
Emitter current IE (mA)
2
.