DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3386
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK3386...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
2SK3386
SWITCHING N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect
Transistor
designed for high current switching applications.
ORDERING INFORMATION PART NUMBER 2SK3386
PACKAGE TO-251
FEATURES
Low On-state Resistance 5 RDS(on)1 = 21 mΩ MAX. (VGS = 10 V, ID = 17 A) 5 RDS(on)2 = 36 mΩ MAX. (VGS = 4.0 V, ID = 17 A)
Low Ciss : Ciss = 2100 pF TYP. Built-in Gate Protection Diode TO-251/TO-252 package
2SK3386-Z
TO-252
(TO-251)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Drain to Source Voltage
VDSS
Gate to Source Voltage
VGSS
Drain Current (DC) 5 Drain Current (Pulse) Note1 5 Total Power Dissipation (TC = 25°C)
ID(DC) ID(pulse)
PT
Total Power Dissipation (TA = 25°C)
PT
Channel Temperature
Tch
Storage Temperature 5 Single Avalanche Current Note2 5 Single Avalanche Energy Note2
Tstg IAS EAS
60 ±20 ±34 ±120 40 1.0 150 –55 to +150 28 78
V V A A W W °C °C A mJ
(TO-252)
Notes 1. PW ≤ 10 µs, Duty cycle ≤ 1 % 2. Starting Tch = 25 °C, RG = 25 Ω, VGS = 20 V → 0 V
THERMAL RESISTANCE 5 Channel to Case
Channel to Ambient
Rth(ch-C) Rth(ch-A)
3.13 °C/W 125 °C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14471EJ1V0DS00 (1st edition) Dat...