NIC9N05ATS1

NIC9N05TS1, NIC9N05ATS1 Protected Power MOSFET 2.6 A, 52 V, N−Channel, Logic Level, Clamped MOSFET w/ ESD Protection MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Rating Symbol Value Unit Drain−to−Source Voltage Internally Clamped Gate−to−Source Voltage − Continuous Operating and Storage Temperature Range Electro−Static Discharge Capability (HBM) (MM) VDSS VGS TJ, Tstg ESD 52−59 ±15 −55 to 150 5000 500 V V °C V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. http://onsemi.com Drain (Pins 2, 4) Gate (Pin 1) Overvoltage RG Protection ESD Protection MPWR Source (Pin 3) ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2011 November, 2011 − Rev. 1 1 Publication Order Number: NIC9N05TS1/D NIC9N05TS1, NIC9N05ATS1 MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (Note 1) Characteristic Symbol Min OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 V, ID = 1.0 mA, TJ = 25°C) V(BR)DSS 52 Zero Gate Voltage Drain Current (VDS = 40 V, VGS = 0 V) IDSS Gate−Body Leakage Current (VGS = ±8 V, VDS = 0 V) (VGS = ±14 V, VDS = 0 V) ON CHARACTERISTICS IGSS Gate Thres...