SFT1431

Ordering number : ENA1624B SFT1431 Power MOSFET 35V, 25mΩ,11A, Single N-Channel Features Low On-Resistance High Speed Switching Low Gate Charge ESD Diode-Protected Gate Pb-free and RoHS Compliance Specifications Absolute Maximum Ratings at Ta = 25°C Parameter Symbol Drain to Source Voltage VDSS Gate to Source Voltage VGSS Drain Current (DC) Drain Current PW≤10μs, duty cycle≤1% ID IDP Power Dissipation Junction Temperature Storage Temperature Tc=25°C PD Tj Tstg Thermal Resistance Ratings Parameter Junction to Case Steady State Junction to Ambient *1 Note : *1 Insertion mounted Symbol RθJC RθJA Value 35 ±20 11 44 1.0 15 150 −55 to +150 Unit V V A A W W °C °C Value 8.33 125 Unit °C/W http://onsemi.com Electrical Connection N-Channel 2,4 1 3 Packing Type:TL Marking T1431 TL LOT No. 4 1 2 IPAK(TP) 3 4 2 1 3 DPAK(TP-FA) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Semiconductor Components Industries, LLC, 2014 September, 2014 91014 TKIM TC-00003150/60612 TKIM/D0209PA TKIM TC-00002143 No.A1624-1/6 Electrical Characteristics at Ta = 25°C Parameter Symbol Drain to Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate to Source Leakage Current Gate Threshold Volta...