NDF04N60ZH

NDF04N60ZH Product Preview N-Channel Power MOSFET 600 V, 2.0 W Features Low ON Resistance Low Gate Charge 100% Avalanche Tested These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Symbol Typ Unit Drain−to−Source Voltage Continuous Drain Current RqJC VDSS ID 600 4.4 (Note 2) V A Continuous Drain Current RqJC, TA = 100°C ID 2.8 A (Note 2) Pulsed Drain Current, VGS @ 10 V Power Dissipation RqJC (Note 1) Gate−to−Source Voltage Single Pulse Avalanche Energy, ID = 4.0 A ESD (HBM) (JESD22−A114) RMS Isolation Voltage (t = 0.3 sec., R.H. ≤ 30%, TA = 25°C) (Figure 14) IDM PD VGS EAS Vesd VISO 18 (Note 2) 28 ±30 120 3000 4500 A W V mJ V V Peak Diode Recovery dv/dt 4.5 V/ns (Note 3) Continuous Source Current (Body Diode) IS 4.0 A Maximum Temperature for Soldering Leads TL 260 °C Operating Junction and Storage Temperature Range TJ, Tstg −55 to 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1″ sq. pad size (Cu area = 1.127 in sq [2 oz] including traces). 2. Limited by maximum junction temperature 3. ISD = 4.0 A, di/dt ≤ 100 A/ms, VDD ≤ BVDSS, TJ = +150°C This document contains information on...