RDN050N20

Transistors 10V Drive Nch MOS FET RDN050N20 RDN050N20 zStructure Silicon N-channel MOS FET zFeatures 1) Low on-resistance. 2) Low input capacitance. 3) Exellent resistance to damage from static electricity. zApplication Switching zExternal dimensions (Unit : mm) TO-220FN 10.0 φ3.2 4.5 2.8 15.0 12.0 8.0 (1)Gate (2)Drain (3)Source 14.0 5.0 1.2 1.3 0.8 2.54 2.54 (1) (2) (3) 0.75 2.6 zPackaging specifications Package Type Code Basic ordering unit (pieces) RDN050N20 Bulk − 500 zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Drain-Source Voltage VDSS Gate-Source Voltage VGSS Drain Current Continuous Pulsed ID IDP ∗1 Reverse Drain Current Continuous Pulsed IDR IDRP ∗1 Source Current (Body Diode) Avalanche Current Avalanche Energy Continuous Pulsed IS ISP IAS EAS ∗1 ∗2 ∗2 Total Power Dissipation (TC=25°C) PD Channel Temperature Tch Storage Temperature Tstg ∗1 Pw ≤ 10µs, Duty cycle ≤ 1% ∗2 L 4.5mH, VDD=50V, RG=25Ω, 1Pulse, Tch=25°C Limits 200 ±30 5 20 5 20 5 20 5 75 30 150 −55 to +150 Unit V V A A A A A A A mJ W °C °C zThermal resistance Parameter Channel to case Channel to ambient Symbol Rth(ch-c) Rth(ch-a) Limits 4.17 62.5 zEquivalent Circuit Drain Gate ∗2 ∗1 ∗1 ESD Protection diode ∗2 Body Diode Source ∗A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. Use the protection circuit when the fixed voltages are exceeded. Unit °C/...