R6006ANX

R6006ANX Nch 600V 6A Power MOSFET Datasheet VDSS RDS(on) (Max.) ID PD 600V 1.2W 6A 40W lOutline TO-220FM (1)(2)(3) lFeatures 1) Low on-resistance. lInner circuit 2) Fast switching speed. 3) Gate-source voltage (VGSS) guaranteed to be 30V. 4) Drive circuits can be simple. (1) Gate (2) Drain (3) Source *1 Body Diode 5) Parallel use is easy. 6) Pb-free lead plating ; RoHS compliant lPackaging specifications Packing Bulk Reel size (mm) - lApplication Switching Power Supply Tape width (mm) Type Basic ordering unit (pcs) Taping code 500 - Marking R6006ANX lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current Gate - Source voltage Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current Power dissipation (Tc = 25C) Junction temperature Range of storage temperature Reverse diode dv/dt Tc = 25C Tc = 100C VDSS ID *1 ID *1 ID,pulse *2 VGSS EAS *3 EAR *4 IAR *3 PD Tj Tstg dv/dt *5 600 6 2.9 24 30 2.4 1.9 3 40 150 -55 to +150 15 V A A A V mJ mJ A W C C V/ns www.rohm.com © 2012 ROHM Co., Ltd. All rights reserved. 1/13 2012.01 - Rev.B R6006ANX lAbsolute maximum ratings Parameter Drain - Source voltage slope Data Sheet Symbol Conditions dv/dt VDS = 480V, ID = 6A Tj = 125C Values Unit 50 V/ns lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s S...