ECH8310

Ordering number : ENA1430B ECH8310 P-Channel Power MOSFET –30V, –9A, 17mΩ, Single ECH8 http://onsemi.com Features 4V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Ratings --30 ±20 --9 --60 1.5 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions unit : mm (typ) 7011A-002 Top View 2.9 85 ECH8310-TL-H 0.15 0 to 0.02 Product & Package Information Package : ECH8 JEITA, JEDEC :- Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking JM Lot No. TL 2.8 0.9 0.25 2.3 0.25 1 0.65 4 0.3 Bottom View 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain ECH8 Electrical Connection 87 6 5 12 3 4 0.07 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 March, 2014 30714HK/60612TKIM/O1409TKIM TC-00002092 PE No. A1430-1/5 ECH8310 Electrical Characteristics...