ECH8309

Ordering number : ENA1418B ECH8309 P-Channel Power MOSFET –12V, –9.5A, 16mΩ, Single ECH8 http://onsemi.com Features 1.8V drive Halogen free compliance Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Ratings --12 ±10 --9.5 --40 1.5 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions unit : mm (typ) 7011A-002 Top View 2.9 85 ECH8309-TL-H 0.15 0 to 0.02 Product & Package Information Package : ECH8 JEITA, JEDEC :- Minimum Packing Quantity : 3,000 pcs./reel Packing Type : TL Marking JL Lot No. TL 2.8 0.9 0.25 2.3 0.25 1 0.65 4 0.3 Bottom View 1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain ECH8 Electrical Connection 87 6 5 12 3 4 0.07 Semiconductor Components Industries, LLC, 2013 July, 2013 53012 TKIM/22509PE MSIM TC-00001633 No. A1418-1/7 ECH8309 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-S...