MII200-12A4

IGBT Modules Short Circuit SOA Capability Square RBSOA MII 200-12 A4 MID 200-12 A4 MDI 200-12 A4 IC25 = 270 A VCES = 1200 V V = 2.2 V CE(sat) typ. MII 3 MID 3 MDI 3 8 91 8 19 1 11 11 10 2 10 2 2 3 2 1 11 10 9 8 Symbol VCES VCGR VGES VGEM IC25 IC80 ICM tSC (SCSOA) RBSOA Ptot TJ Tstg VISOL Md Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 20 kW Continuous Transient TC = 25°C TC = 80°C TC = 80°C, tp = 1 ms VGE = ±15 V, VCE = VCES, TJ = 125°C RG = 6.8 W, non repetitive VGE= ±15 V, TJ = 125°C, RG = 6.8 W Clamped inductive load, L = 100 mH TC = 25°C 50/60 Hz, RMS t = 1 min IISOL £ 1 mA t=1s Insulating material: Al2O3 Mounting torque (module) (teminals) dS dA a Weight Creepage distance on surface Strike distance through air Max. allowable acceleration Typical Data according to a single IGBT/FRED unless otherwise stated. Maximum Ratings 1200 1200 ±20 ±30 270 180 360 10 V V V V A A A ms ICM = 360 VCEK < VCES 1130 150 -40 ... +150 4000 4800 A W °C °C V~ V~ 2.25-2.75 20-25 2.5-3.7 22-33 10 9.6 50 250 8.8 Nm lb.in. Nm lb.in. mm mm m/s2 g oz. E 72873 Features q NPT IGBT technology q low saturation voltage q low switching losses q switching frequency up to 30 kHz q square RBSOA, no latch up q high short circuit capability q positive temperature coefficient for easy parallelling q MOS input, voltage controlled q ultra fast free wheeling diodes q package with DCB ceramic base plate q isolation voltage 4800 V q UL registered E72873 Advantages q space...