IGBT Module
IGBT (NPT) Module
Phase leg
Part number
MII100-12A3
MII100-12A3
VCES = 2x 1200 V
I C25 =
135 A
V =CE(sat)
2.2 V
7...
Description
IGBT (NPT) Module
Phase leg
Part number
MII100-12A3
MII100-12A3
VCES = 2x 1200 V
I C25 =
135 A
V =CE(sat)
2.2 V
7 6
4 5
Features / Advantages:
● NPT IGBT technology ● low saturation voltage ● low switching losses ● switching frequency up to 30 kHz ● square RBSOA, no latch up ● high short circuit capability ● positive temperature coefficient for
easy parallelling ● MOS input, voltage controlled ● ultra fast free wheeling diodes
Backside: isolated
1
3
2
Applications:
● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode
power supplies ● Inductive heating, cookers ● Pumps, Fans
Package: Y4
● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131206a
MII100-12A3
IGBT Symbol VCES VGES VGEM I C25 I C80 Ptot VCE(sat)
Definition
collector emitter voltage max. DC gate voltage max. transient gate emitter voltage collector current
total power dissipation collector emitter saturation voltage
VGE(th) I CES
gate emitter threshold voltage collector emitter leakage current
I GES Q G(on) t d(on) tr t d(off) tf Eon Eoff RBSOA I CM SCSOA t SC I SC R thJC RthCH
gate ...
Similar Datasheet