MII75-12A3

IGBT (NPT) Module Phase leg Part number MII75-12A3 MII75-12A3 VCES = 2x 1200 V I C25 = 90 A V =CE(sat) 2.2 V 7 6 4 5 Features / Advantages: ● NPT IGBT technology ● low saturation voltage ● low switching losses ● switching frequency up to 30 kHz ● square RBSOA, no latch up ● high short circuit capability ● positive temperature coefficient for easy parallelling ● MOS input, voltage controlled ● ultra fast free wheeling diodes Backside: isolated 1 3 2 Applications: ● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode power supplies ● Inductive heating, cookers ● Pumps, Fans Package: Y4 ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Soldering pins for PCB mounting ● Base plate: DCB ceramic ● Reduced weight ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131206a MII75-12A3 IGBT Symbol VCES VGES VGEM I C25 I C80 Ptot VCE(sat) Definition collector emitter voltage max. DC gate voltage max. transient gate emitter voltage collector current total power dissipation collector emitter saturation voltage VGE(th) I CES gate emitter threshold voltage collector emitter leakage current I GES Q G(on) t d(on) tr t d(off) tf Eon Eoff RBSOA I CM SCSOA t SC I SC R thJC RthCH gate emit...