IGBT Module
MIO 1200-33E10
IGBT Module Single switch
Short Circuit SOA Capability Square RBSOA
IC80 = 1200 A
VCES
= 3300 V
VCE(...
Description
MIO 1200-33E10
IGBT Module Single switch
Short Circuit SOA Capability Square RBSOA
IC80 = 1200 A
VCES
= 3300 V
VCE(sat) typ. = 3.1 V
CC
C
C'
G
E'
EE
E
phase-out
IGBT
Symbol VCES VGES IC80 ICM tSC
Conditions VGE = 0 V
TC = 80°C tp = 1 ms; TC = 80°C VCC = 2500 V; VCEM CHIP = < 3300 V; VGE < 15 V; TVJ < 125°C
Maximum Ratings
3300
V
± 20 V
1200
A
2400
A
10 µs
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat)
IC = 1200 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C
3.1 V 3.8 V
VGE(th)
IC = 240 mA; VCE = VGE
6 8V
ICES VCE = 3300 V; VGE = 0 V; TVJ = 125°C IGES VCE = 0 V; VGE = ± 20 V; TVJ = 125°C
120 mA 500 nA
td(on) tr td(off) t
f
Eon
Eoff
Inductive load; TVJ = 125°C; VGE = ±15 V; VCC = 1800 V; IC = 1200 A; RG = 1.5 Ω;
Lσ = 100 nH
400 200 1070 440 1890 1950
ns ns ns ns mJ mJ
Cies Coes Cres
VCE = 25 V; VGE = 0 V; f = 1 MHz
Qge IC = 1200 A; VCE = 1800 V; VGE = ± 15 V
RthJC
Collector emitter saturation voltage is given at chip level
187 nF 11.6 nF
2.2 nF
12.1 µC
0.0085 K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
Features NPT³ IGBT
- Low-loss - Smooth switching waveforms for good EMC Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance Typical Applications AC power converters for - industrial drives - windmills - traction LASER pu...
Similar Datasheet