MIO1500-25E10

Advanced Technical Information MIO 1500-25E10 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 1500 A VCES = 2500 V VCE(sat) typ. = 2.7 V CC C C' G E' EE E IGBT Symbol VCES VGES IC80 ICM tSC Conditions VGE = 0 V TC = 80°C tp = 1 ms; TC = 80°C VCC = 1700 V; VCEM CHIP = < 2500 V; VGE < 15 V; TVJ < 125°C Maximum Ratings 2500 V ± 20 V 1500 A 3000 A 10 µs Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) ① IC = 1500 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C VGE(th) IC = 240 mA; VCE = VGE ICES VCE = 2500 V; VGE = 0 V; TVJ = 125°C IGES VCE = 0 V; VGE = ± 20 V; TVJ = 125°C Eon Inductive load; TVJ = 125°C; VGE = ±15 V; Eoff VCC = 1200V; IC = 1500A; RG = 1.5Ω; Lσ = 100nH RthJC ① Collector emitter saturation voltage is given at chip level 2.7 V 3.3 V 6 7.5 V 100 mA 500 nA 1400 1450 mJ mJ 0.008 K/W Features NPT³ IGBT - Low-loss - Smooth switching waveforms for good EMC Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance Typical Applications AC power converters for - industrial drives - windmills - traction LASER pulse generator 405 IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 1-3 Advanced Technical Information Diode Symbol IF80 IFSM Conditions Maximum Ratings TC = 80°C VR = 0 V; TVJ = 125°C; tp = 10 ms; half...