Document
Advanced Technical Information
MIO 1200-25E10
IGBT Module Single switch
Short Circuit SOA Capability Square RBSOA
IC80 = 1200 A
VCES
= 2500 V
VCE(sat) typ. = 2.5 V
CC C C'
G
E'
EE
E
IGBT
Symbol VCES VGES IC80 ICM t
SC
Conditions VGE = 0 V
TC = 80°C
tp = 1 ms; TC = 80°C
V CC
=
1800
V;
VCEM
CHIP
=
<
2500
V;
VGE < 15 V; TVJ < 125°C
Maximum Ratings
2500
V
± 20 V
1200
A
2400
A
10 µs
Symbol
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) ①
IC = 1200 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C
2.5 V 3.1 3.4 V
VGE(th)
IC = 240 mA; VCE = VGE
6 7.5 V
ICES VCE = 2500 V; VGE = 0 V; TVJ = 125°C IGES VCE = 0 V; VGE = ± 20 V; TVJ = 125°C
120 mA 500 nA
td(on) t
r
td(off) t
f
Eon
Eoff
Inductive load; TVJ = 125°C; VGE = ±15 V; VCC = 1250V; IC = 1200A; RG = 1.5Ω; Lσ = 100nH
365 250 980 345 1150 1250
ns ns ns ns mJ mJ
C ies
Coes C
res
VCE = 25 V; VGE = 0 V; f = 1 MHz
Q ge
I
C
=
1200
A;
V CE
=
1250
V;
VGE
=
±
15
V
RthJC
① Collector emitter saturation voltage is given at chip level
186 nF 13.7 nF
3.0 nF
12.2 µC
0.009 K/W
Features
• NPT³ IGBT - Low-loss - Smooth switching waveforms for good EMC
• Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance
Typical Applications
• AC power converters for - industrial drives - windmills - traction
• LASER pulse generator
416
IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved
1-6
Advanced Technical Information
Diode
Symbol IF80 IFSM
Conditions
Maximum Ratings
TC = 80°C VR = 0 V; TVJ = 125°C; tp = 10 ms; half-sinewave
1200 11000
A A
Symbol
Conditions
VF ②
IF = 1200 A; TVJ = 25°C TVJ = 125°C
IRM t
rr
QRR Erec
VCC = 1250 V; IC = 1200 A; VGE = ±15 V; RG = 1.5 Ω; TVJ = 125°C
Inductive load; Lσ = 100nH
R thJC
② Forward voltage is given at chip level
Characteristic Values min. typ. max.
1.75 V 1.8 V
1180 970
1150 990
A ns µC mJ
0.017 K/W
Module
Symbol
TJM TVJ Tstg V
ISOL
M d
Conditions
max. junction temperature Operating temperature Storage temperature
50 Hz
Mounting torque Base-heatsink, M6 screws Main terminals, M8 screws
Maximum Ratings
+150 -40...+125 -40...+125
°C °C °C
5000
V~
4-6 8 - 10
Nm Nm
Symbol
Conditions
Characteristic Values min. typ. max.
dA
Clearance distance terminal to base
23
terminal to terminal 19
dS
Surface creepage terminal to base
33
distance
terminal to terminal 33
mm mm
mm mm
Lσ R *)
term-chip
R thCH
Weight
Module stray inductance, C to E terminal Resistance terminal to chip per module; λ grease = 1 W/m•K
10 0.085 0.006 1500
nH mΩ K/W
g
*) V = VCE(sat) + R ·term-chip IC resp. V = VF + R ·term-chip IF
MIO 1200-25E10
416
2-6
© 2004 IXYS All rights reserved
Advanced Technical Information
MIO 1200-25E10
2400
2200 2000 1800 1600 1400
17 V 15 V 13 V 11 V
IC [A]
1200
1000
800
600 9V
400
200 Tvj = 25°C
0 .