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MIO1200-25E10 Dataheets PDF



Part Number MIO1200-25E10
Manufacturers IXYS
Logo IXYS
Description IGBT Module
Datasheet MIO1200-25E10 DatasheetMIO1200-25E10 Datasheet (PDF)

Advanced Technical Information MIO 1200-25E10 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 1200 A VCES = 2500 V VCE(sat) typ. = 2.5 V CC C C' G E' EE E IGBT Symbol VCES VGES IC80 ICM t SC Conditions VGE = 0 V TC = 80°C tp = 1 ms; TC = 80°C V CC = 1800 V; VCEM CHIP = < 2500 V; VGE < 15 V; TVJ < 125°C Maximum Ratings 2500 V ± 20 V 1200 A 2400 A 10 µs Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) .

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Advanced Technical Information MIO 1200-25E10 IGBT Module Single switch Short Circuit SOA Capability Square RBSOA IC80 = 1200 A VCES = 2500 V VCE(sat) typ. = 2.5 V CC C C' G E' EE E IGBT Symbol VCES VGES IC80 ICM t SC Conditions VGE = 0 V TC = 80°C tp = 1 ms; TC = 80°C V CC = 1800 V; VCEM CHIP = < 2500 V; VGE < 15 V; TVJ < 125°C Maximum Ratings 2500 V ± 20 V 1200 A 2400 A 10 µs Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. VCE(sat) ① IC = 1200 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C 2.5 V 3.1 3.4 V VGE(th) IC = 240 mA; VCE = VGE 6 7.5 V ICES VCE = 2500 V; VGE = 0 V; TVJ = 125°C IGES VCE = 0 V; VGE = ± 20 V; TVJ = 125°C 120 mA 500 nA td(on) t r td(off) t f Eon Eoff Inductive load; TVJ = 125°C; VGE = ±15 V; VCC = 1250V; IC = 1200A; RG = 1.5Ω; Lσ = 100nH 365 250 980 345 1150 1250 ns ns ns ns mJ mJ C ies Coes C res VCE = 25 V; VGE = 0 V; f = 1 MHz Q ge I C = 1200 A; V CE = 1250 V; VGE = ± 15 V RthJC ① Collector emitter saturation voltage is given at chip level 186 nF 13.7 nF 3.0 nF 12.2 µC 0.009 K/W Features • NPT³ IGBT - Low-loss - Smooth switching waveforms for good EMC • Industry standard package - High power density - AISiC base-plate for high power cycling capacity - AIN substrate for low thermal resistance Typical Applications • AC power converters for - industrial drives - windmills - traction • LASER pulse generator 416 IXYS reserves the right to change limits, test conditions and dimensions. © 2004 IXYS All rights reserved 1-6 Advanced Technical Information Diode Symbol IF80 IFSM Conditions Maximum Ratings TC = 80°C VR = 0 V; TVJ = 125°C; tp = 10 ms; half-sinewave 1200 11000 A A Symbol Conditions VF ② IF = 1200 A; TVJ = 25°C TVJ = 125°C IRM t rr QRR Erec VCC = 1250 V; IC = 1200 A; VGE = ±15 V; RG = 1.5 Ω; TVJ = 125°C Inductive load; Lσ = 100nH R thJC ② Forward voltage is given at chip level Characteristic Values min. typ. max. 1.75 V 1.8 V 1180 970 1150 990 A ns µC mJ 0.017 K/W Module Symbol TJM TVJ Tstg V ISOL M d Conditions max. junction temperature Operating temperature Storage temperature 50 Hz Mounting torque Base-heatsink, M6 screws Main terminals, M8 screws Maximum Ratings +150 -40...+125 -40...+125 °C °C °C 5000 V~ 4-6 8 - 10 Nm Nm Symbol Conditions Characteristic Values min. typ. max. dA Clearance distance terminal to base 23 terminal to terminal 19 dS Surface creepage terminal to base 33 distance terminal to terminal 33 mm mm mm mm Lσ R *) term-chip R thCH Weight Module stray inductance, C to E terminal Resistance terminal to chip per module; λ grease = 1 W/m•K 10 0.085 0.006 1500 nH mΩ K/W g *) V = VCE(sat) + R ·term-chip IC resp. V = VF + R ·term-chip IF MIO 1200-25E10 416 2-6 © 2004 IXYS All rights reserved Advanced Technical Information MIO 1200-25E10 2400 2200 2000 1800 1600 1400 17 V 15 V 13 V 11 V IC [A] 1200 1000 800 600 9V 400 200 Tvj = 25°C 0 .


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