2SD755, 2SD756, 2SD756A
Silicon NPN Epitaxial
Application
• Low frequency high voltage amplifier • Complementary pair w...
2SD755, 2SD756, 2SD756A
Silicon
NPN Epitaxial
Application
Low frequency high voltage amplifier Complementary pair with 2SB715, 2SB716 and 2SB716A
Outline
TO-92MOD
3 2 1
1. Emitter 2. Collector 3. Base
2SD755, 2SD756, 2SD756A
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature
Symbol VCBO VCEO VEBO IC PC Tj Tstg
2SD755 100 100 5 50 750 150 –55 to +150
2SD756 120 120 5 50 750 150 –55 to +150
2SD756A 140 140 5 50 750 150 –55 to +150
Unit V V V mA mW °C °C
Electrical Characteristics (Ta = 25°C)
2SD755
2SD756
2SD756A
Item
Symbol Min Typ Max Min Typ Max Min Typ Max Unit Test conditions
Collector to emitter breakdown voltage
Collector to base breakdown voltage
V(BR)CEO 100 — — 120 — — 140 — — V IC = 1 mA, RBE = ∞
V(BR)CBO 100 — — 120 — — 140 — — V IC = 10 µA, IE = 0
Collector cutoff current ICBO DC current transfer ratio hFE1*1
—— 250 —
0.5 — — 1200 250 —
0.5 — — 800 250 —
0.5 500
hFE2 125 — — 125 — — 125 — —
Base to emitter voltage VBE
— — 0.75 —
0.75 — — 0.75
Collector to emitter saturation voltage
VCE(sat) — — 0.2 — — 0.2 — — 0.2
Gain bandwidth product fT
— 350 — — 350 — — 350 —
Collector output capacitance
Cob — 1.6 — — 1.6 — — 1.6 —
Note: 1. The 2SD755, 2SD756 and 2SD756A are grouped by hFE1 as follows.
DE
F
µA VCB = 100 V, IE = 0
VCE = 12 V, IC = 2 mA
VCE = 12 V, IC = 10 mA
V VCE = ...