MWI30-12E6K

IGBT Module Sixpack Short Circuit SOA Capability Square RBSOA Preliminary data Part name (Marking on product) MWI 30-12E6K 10, 23 14 8 13 NTC 7 6 5 9, 24 18 17 4 3 22 21 2 1 MWI 30-12E6K IC25 = 29 A VCES = 1200 V VCE(sat) typ. = 2.5 V 11, 12 15, 16 19, 20 E72873 Pin configuration see outlines. phase-out Features: SPT IGBTs - low saturation voltage - positive temperature coefficient for easy paralleling - fast switching - short tail current for optimized performance also in resonant circuits HiPerFREDTM diode: - fast reverse recovery - low operating forward voltage - low leakage current Industry Standard Package - solderable pins for PCB mounting - isolated copper base plate Application: AC drives UPS Welding IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Package: UL registered Industry standard E1-pack 20071113a -4 MWI 30-12E6K IGBTs Symbol VCES VGES VGEM IC25 IC80 Ptot VCE(sat) Definitions collector emitter voltage max. DC gate voltage max. transient collector gate voltage collector current total power dissipation collector emitter saturation voltage VGE(th) ICES gate emitter threshold voltage collector emitter leakage current IGES Cies QG(on) td(on) tr td(off) tf Eon Eoff ICM gate emitter leakage current input capacitance total gate charge turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off ...