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MWI300-12E9 Dataheets PDF



Part Number MWI300-12E9
Manufacturers IXYS
Logo IXYS
Description IGBT Module
Datasheet MWI300-12E9 DatasheetMWI300-12E9 Datasheet (PDF)

MWI 300-12 E9 IGBT Modules Sixpack 15 28 16 17 29 13 14 2 20 21 22 11/12 18 19 1 4 25 26 27 9/10 23 24 3 IC80 = 375 A VCES = 1200 V VCE(sat) typ. = 2.0 V 6 7/8 E72873 5 See outline drawing for pin arrangement phase-out IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot Conditions TVJ = 25°C to 125°C TC = 25°C TC = 80°C RG = 3.3 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 3.3 Ω TVJ = 125°C; non-repetitive; VCEmax < VCES TC = 25°C Maximum R.

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MWI 300-12 E9 IGBT Modules Sixpack 15 28 16 17 29 13 14 2 20 21 22 11/12 18 19 1 4 25 26 27 9/10 23 24 3 IC80 = 375 A VCES = 1200 V VCE(sat) typ. = 2.0 V 6 7/8 E72873 5 See outline drawing for pin arrangement phase-out IGBTs Symbol VCES VGES IC25 IC80 RBSOA tSC (SCSOA) Ptot Conditions TVJ = 25°C to 125°C TC = 25°C TC = 80°C RG = 3.3 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 3.3 Ω TVJ = 125°C; non-repetitive; VCEmax < VCES TC = 25°C Maximum Ratings 1200 V ± 20 V 530 375 ICM = 750 VCEK < VCES 10 A A A µs 2.1 kW Symbol VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 300 A; VGE = 15 V IC = 12 mA; VGE = VCE VCE = VCES; VGE = 0 V VCE = 0 V; VGE = ± 20 V TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C Inductive load, TVJ = 125°C VCE = 600 V; IC = 300 A VGE = ±15 V; RG = 3.3 Ω VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 300 A 2.0 2.2 4.5 0.4 1 180 100 650 120 19 32 22 2.3 2.4 V 2.7 V 6.5 V 1 mA 12 mA 600 nA ns ns ns ns mJ mJ nF µC 0.06 K/W Features • NPT3 IGBT technology • low saturation voltage • low switching losses • square RBSOA, no latch up • high short circuit capability • positive temperature coefficient for easy parallelling • MOS input, voltage controlled • ultra fast free wheeling diodes • solderable pins for PCB mounting • package with copper base plate Advantages • space savings • reduced protection circuits • package designed for wave soldering Typical Applications • AC motor control • AC servo and robot drives • power supplies IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20100401b 1-5 phase-out Diodes Symbol IF80 IFRM I2t Symbol VF IRM RthJC Conditions TC = 80°C tp = 1 ms TVJ = 125°C; t = 10 ms; VR = 0 V Maximum Ratings 300 A 600 A 21400 A2s Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IF = 300 A; VGE = 0 V; TVJ = 25°C IF = 300 A; diF/dt = 2700 A/µs; TVJ = 125°C; VR = 800 V 2.1 240 V A 0.11 K/W Temperature Sensor NTC Symbol Conditions R25 B25/50 T = 25°C Module Symbol TVJ TJM Tstg VISO Md Conditions operating IISOL < 1 mA; 50/60 Hz Mounting torque (M5) Terminal connection torque (M6) Symbol Conditions R *) therm-chip dS dA RthCH Weight Resistance terminal to chip Creepage distance on surface Strike distance in air with heatsink compound *) V = VCEsat + 2x Rtherm-chip·IC resp. V = VF + 2x R·IF Characteristic Values min. typ. max. 4.75 5.0 5.25 3375 kΩ K Maximum Ratings -40...+125 +150 -40...+125 °C °C °C 3400 V~ 3 - 6 Nm 3 - 6 Nm Characteristic Values min. typ. max. 0.55 12.7 10 0.01 900 mΩ mm mm K/W g MWI 300-12 E9 IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20100401b 2-5 Dimensions in mm (1 mm = 0.0394") MWI 300-12 E9 phase-out = tolerance for all dimensions: Diode Ri 2.884·10-5 τi 1·10-5 1.523·10-3 5·10-5 7.617·10-3 0.012 0.03 0.078 0.036 0.82 IGBT Ri 2.344·10-5 τi 1·10-5 5.97·10-4 5·10-5 5.97·10-3 0.015 0.023 0.075 0.028 0.69 IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20100401b 3-5 IF [A] IC [A] IRM [A] p h a s e - o 600 500 400 300 200 TJ = 125°C 100 TJ = 25°C 0 0.0 0.5 1.0 1.5 2.0 2.5 VF [V] Fig. 1 Typ. forward characteristics of free wheeling diode 3.0 600 TJ = 25°C 400 200 11 V 13 V 15 V 17 V 19 V 9V 0 024 VCE [V] Fig. 3 Typ. output characteristics 6 20 15 VCE = 600 V IC = 100 A 10 5 0 -5 -10 -15 -20 0 123 QG [µC] Fig. 5 Typ. turn on gate charge 4 IC [A]u t ICE [A] MWI 300-12 E9 600 500 400 300 200 TJ = 125°C 100 0 6 TJ = 25°C 8 VGE [V] 10 Fig. 2 Typ. transfer characteristics 12 600 TJ = 125°C 500 400 300 200 11 V 13 V 15 V 17 V 19 V 9V 100 0 024 VCE [V] Fig. 4 Typ. output characteristics 6 trr [ns] 300 200 TJ = 125°C VR = 600 V IF = 300 A 18 Ω 24 Ω IRM 100 24 Ω 18 Ω 5.6 Ω 12 Ω 900 2.4 Ω 600 12 Ω 5.6 Ω 2.4 Ω 300 trr 0 1000 2000 3000 -di/dt [A/µs] Fig. 6 Typ. turn off characteristics of free wheeling diode 0 4000 VGE [V] IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved 20100401b 4-5 MWI 300-12 E9 E [mJ] t [ns] Eoff [mJ] t [ns] t [ns] E [mJ] Qrr[nC] p h a s e - ZthJC [K/W] 80 td(on) 240 60 VCE = 600 V VGE = ±15 V 40 RG = 2.4 Ω TVJ = 125°C 180 tr 120 20 Eon 60 Erec(off) 00 0 100 200 300 400 500 600 IC [A] Fig. 7 Typ.turn on energy and switching times versus collector current 180 150 120 VCE = 600 V VGE = ±15 V IC = 300 A TVJ = 125°C 90 60 30 0 0 Eon Erec(off) 10 20 RG [Ω] td(on) tr 30 600 500 400 300 200 100 0 40 Fig. 9 Typ. turn on energy and switching times versus gate resistor 18 VR = 600 V 16 IF = ±15 V 14 TVJ = 125°C 12 Ω 5.6 Ω 5.6 Ω 12 1.


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