Document
MWI 300-12 E9
IGBT Modules Sixpack
15 28 16
17
29 13 14
2
20 21 22
11/12
18 19
1
4
25 26 27
9/10
23 24
3
IC80 = 375 A VCES = 1200 V VCE(sat) typ. = 2.0 V
6
7/8 E72873
5 See outline drawing for pin arrangement
phase-out
IGBTs Symbol VCES VGES IC25 IC80 RBSOA
tSC (SCSOA) Ptot
Conditions TVJ = 25°C to 125°C
TC = 25°C TC = 80°C RG = 3.3 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH VCE = 900 V; VGE = ±15 V; RG = 3.3 Ω TVJ = 125°C; non-repetitive; VCEmax < VCES TC = 25°C
Maximum Ratings
1200
V
± 20 V
530 375
ICM = 750 VCEK < VCES
10
A A A
µs
2.1 kW
Symbol
VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified)
min. typ. max.
IC = 300 A; VGE = 15 V IC = 12 mA; VGE = VCE VCE = VCES; VGE = 0 V
VCE = 0 V; VGE = ± 20 V
TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C
Inductive load, TVJ = 125°C VCE = 600 V; IC = 300 A VGE = ±15 V; RG = 3.3 Ω VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600 V; VGE = 15 V; IC = 300 A
2.0 2.2
4.5
0.4 1
180 100 650 120
19 32
22 2.3
2.4 V 2.7 V
6.5 V
1 mA 12 mA
600 nA
ns ns ns ns mJ mJ
nF µC
0.06 K/W
Features
• NPT3 IGBT technology • low saturation voltage • low switching losses • square RBSOA, no latch up • high short circuit capability • positive temperature coefficient for
easy parallelling • MOS input, voltage controlled • ultra fast free wheeling diodes • solderable pins for PCB mounting • package with copper base plate
Advantages
• space savings • reduced protection circuits • package designed for wave soldering
Typical Applications
• AC motor control • AC servo and robot drives • power supplies
IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved
20100401b
1-5
phase-out
Diodes Symbol IF80 IFRM I2t Symbol
VF IRM
RthJC
Conditions TC = 80°C tp = 1 ms TVJ = 125°C; t = 10 ms; VR = 0 V
Maximum Ratings 300 A 600 A
21400 A2s
Conditions
Characteristic Values (TVJ = 25°C, unless otherwise specified)
min. typ. max.
IF = 300 A; VGE = 0 V; TVJ = 25°C IF = 300 A; diF/dt = 2700 A/µs; TVJ = 125°C; VR = 800 V
2.1 240
V A
0.11 K/W
Temperature Sensor NTC Symbol Conditions
R25 B25/50
T = 25°C
Module Symbol TVJ TJM Tstg VISO Md
Conditions operating
IISOL < 1 mA; 50/60 Hz Mounting torque (M5) Terminal connection torque (M6)
Symbol Conditions
R *) therm-chip
dS dA RthCH Weight
Resistance terminal to chip
Creepage distance on surface Strike distance in air
with heatsink compound
*) V = VCEsat + 2x Rtherm-chip·IC resp. V = VF + 2x R·IF
Characteristic Values min. typ. max.
4.75 5.0 5.25 3375
kΩ K
Maximum Ratings
-40...+125 +150
-40...+125
°C °C °C
3400 V~
3 - 6 Nm 3 - 6 Nm
Characteristic Values min. typ. max.
0.55 12.7 10
0.01
900
mΩ mm mm
K/W
g
MWI 300-12 E9
IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved
20100401b
2-5
Dimensions in mm (1 mm = 0.0394")
MWI 300-12 E9
phase-out
= tolerance for all dimensions:
Diode
Ri 2.884·10-5
τi 1·10-5
1.523·10-3
5·10-5
7.617·10-3
0.012
0.03 0.078
0.036
0.82
IGBT
Ri 2.344·10-5
τi 1·10-5
5.97·10-4
5·10-5
5.97·10-3
0.015
0.023
0.075
0.028
0.69
IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved
20100401b
3-5
IF [A]
IC [A]
IRM [A] p h a s e - o
600
500
400
300
200 TJ = 125°C
100 TJ = 25°C
0 0.0 0.5 1.0 1.5 2.0 2.5
VF [V] Fig. 1 Typ. forward characteristics of free wheeling diode
3.0
600
TJ = 25°C
400
200
11 V 13 V 15 V 17 V 19 V
9V
0 024 VCE [V] Fig. 3 Typ. output characteristics
6
20
15
VCE = 600 V IC = 100 A
10
5
0
-5
-10
-15
-20 0
123 QG [µC]
Fig. 5 Typ. turn on gate charge
4
IC [A]u t
ICE [A]
MWI 300-12 E9
600
500
400
300
200
TJ = 125°C 100
0 6
TJ = 25°C
8 VGE [V] 10
Fig. 2 Typ. transfer characteristics
12
600
TJ = 125°C
500
400
300
200
11 V 13 V 15 V 17 V 19 V
9V
100
0 024 VCE [V] Fig. 4 Typ. output characteristics
6
trr [ns]
300 200
TJ = 125°C VR = 600 V IF = 300 A
18 Ω 24 Ω
IRM
100
24 Ω 18 Ω
5.6 Ω 12 Ω
900
2.4 Ω
600
12 Ω
5.6 Ω
2.4 Ω 300 trr
0 1000
2000
3000
-di/dt [A/µs]
Fig. 6 Typ. turn off characteristics of free wheeling diode
0 4000
VGE [V]
IXYS reserves the right to change limits, test conditions and dimensions. © 2010 IXYS All rights reserved
20100401b
4-5
MWI 300-12 E9
E [mJ] t [ns] Eoff [mJ] t [ns]
t [ns]
E [mJ]
Qrr[nC] p h a s e -
ZthJC [K/W]
80
td(on)
240
60
VCE = 600 V VGE = ±15 V
40 RG = 2.4 Ω
TVJ = 125°C
180 tr 120
20 Eon 60
Erec(off)
00 0 100 200 300 400 500 600 IC [A]
Fig. 7 Typ.turn on energy and switching times versus collector current
180 150 120
VCE = 600 V VGE = ±15 V IC = 300 A TVJ = 125°C
90
60 30
0 0
Eon Erec(off)
10 20 RG [Ω]
td(on) tr
30
600 500 400 300 200 100 0 40
Fig. 9 Typ. turn on energy and switching times versus gate resistor
18
VR = 600 V
16 IF = ±15 V 14 TVJ = 125°C
12 Ω
5.6 Ω 5.6 Ω
12 1.