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MWI50-06A7 Dataheets PDF



Part Number MWI50-06A7
Manufacturers IXYS
Logo IXYS
Description IGBT Module
Datasheet MWI50-06A7 DatasheetMWI50-06A7 Datasheet (PDF)

MWI 50-06 A7 MWI 50-06 A7T IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA Type: MWI 50-06 A7 MWI 50-06 A7T NTC - Option: without NTC with NTC 13 1 2 3 4 17 IC25 = 72 A V CES = 600 V VCE(sat) typ. = 1.9 V 59 6 10 7 11 8 12 T 16 15 14 NTC T E72873 See outline drawing for pin arrangement IGBTs Symbol VCES VGES IC25 IC80 RBSOA t SC (SCSOA) Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Eon Eoff Cies QGon R thJC Conditions Maximum Ratings TVJ = 25°C to 1.

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MWI 50-06 A7 MWI 50-06 A7T IGBT Modules Sixpack Short Circuit SOA Capability Square RBSOA Type: MWI 50-06 A7 MWI 50-06 A7T NTC - Option: without NTC with NTC 13 1 2 3 4 17 IC25 = 72 A V CES = 600 V VCE(sat) typ. = 1.9 V 59 6 10 7 11 8 12 T 16 15 14 NTC T E72873 See outline drawing for pin arrangement IGBTs Symbol VCES VGES IC25 IC80 RBSOA t SC (SCSOA) Ptot Symbol VCE(sat) V GE(th) ICES IGES t d(on) tr td(off) tf Eon Eoff Cies QGon R thJC Conditions Maximum Ratings TVJ = 25°C to 150°C 600 V ± 20 V TC = 25°C TC = 80°C 72 50 VGE = ±15 V; RG = 22 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH ICM = 100 VCEK ≤ VCES V CE = V; CES VGE = ±15 V; R G = 22 Ω; TVJ = 125°C non-repetitive 10 A A A µs TC = 25°C 225 W Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C I = 1 mA; V = V C GE CE VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C VCE = 0 V; VGE = ± 20 V Inductive load, TVJ = 125°C VCE = 300 V; IC = 50 A VGE = ±15 V; RG = 22 Ω 1.9 2.4 V 2.2 V 4.5 6.5 V 0.6 mA 0.7 mA 200 nA 50 ns 60 ns 300 ns 30 ns 2.3 mJ 1.7 mJ VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 50 A (per IGBT) 2800 120 pF nC 0.55 K/W Features ● NPT IGBT technology ● low saturation voltage ● low switching losses ● switching frequency up to 30 kHz ● square RBSOA, no latch up ● high short circuit capability ● positive temperature coefficient for easy parallelling ● MOS input, voltage controlled ● ultra fast free wheeling diodes ● solderable pins for PCB mounting ● package with copper base plate Advantages ● space savings ● reduced protection circuits ● package designed for wave soldering Typical Applications ● AC motor control ● AC servo and robot drives ● power supplies IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 20070912a 1-4 MWI 50-06 A7 MWI 50-06 A7T Diodes Symbol IF25 IF80 Conditions TC = 25°C TC = 80°C Maximum Ratings 72 A 45 A Equivalent Circuits for Simulation Conduction Symbol VF IRM trr RthJC Conditions IF = 50 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C IF = 30 A; diF/dt = -500 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 1.6 1.8 V 1.3 1.5 V 25 A 90 ns 1.19 K/W IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.82 V; R0 = 28 mΩ Free Wheeling Diode (typ. at TJ = 125°C) V0 = 0.89 V; R0 = 8 mΩ Thermal Response Temperature Sensor NTC (MWI ... A7T version only) Symbol Conditions R25 B 25/50 Module Symbol TVJ Tstg VISOL Md T = 25°C Conditions IISOL ≤ 1 mA; 50/60 Hz Mounting torque (M5) Characteristic Values min. typ. max. 4.75 5.0 5.25 kΩ 3375 K Maximum Ratings -40...+150 -40...+125 °C °C 2500 V~ 2.7 - 3.3 Nm IGBT (typ.) Cth1 = 0.201 J/K; Rth1 = 0.42 K/W Cth2 = 1.252 J/K; Rth2 = 0.131K/W Free Wheeling Diode (typ.) Cth1 = 0.116 J/K; Rth1 = 0.973 K/W Cth2 = 0.88 J/K; Rth2 = 0.217 K/W Dimensions in mm (1 mm = 0.0394") Symbol Rpin-chip dS d A R thCH Weight Conditions Creepage distance on surface Strike distance in air with heatsink compound Characteristic Values min. typ. max. 5 mΩ 6 mm 6 mm 0.02 K/W 180 g IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Higher magnification on page B3 - 72 20070912a 2-4 150 12A0 IC 90 60 VGE= 17V 15V 13V 11V 30 9V TVJ = 25°C 0 0 1 2 3 4 5V6 VCE Fig. 1 Typ. output characteristics 150 12A0 IC 90 60 TVJ = 125°C TVJ = 25°C 30 VCE = 20V 0 4 6 8 10 12 14 V 16 VGE Fig. 3 Typ. transfer characteristics 20 V 15 VGE 10 5 0 0 Fig. 5 VCE = 300V IC = 50A 40 80 120 nC 160 QG Typ. turn on gate charge MWI 50-06 A7 MWI 50-06 A7T 150 IC 12A0 90 60 VGE= 17V 15V 13V 11V 9V 30 TVJ = 125°C 0 0 1 2 3 4 5V 6 VCE Fig. 2 Typ. output characteristics 90 7A5 IF 60 45 TVJ = 125°C TVJ = 25°C 30 15 0 0.0 0.5 1.0 1.5 V 2.0 VF Fig. 4 Typ. forward characteristics of free wheeling diode 50 150 4A0 IRM 30 trr 1n2s0 trr 90 20 60 10 IRM 0 0 200 400 600 TVJ = 125°C VR = 300V IF = 30A 30 MWI5006A7 0 8A00/μs 1000 -di/dt Fig. 6 Typ. turn off characteristics of free wheeling diode IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved 20070912a 3-4 10.0 mJ td(on) 100 ns 7.5 Eon 5.0 2.5 Eon 0.0 0 40 75 t tr VCE = 300V VGE = ±15V RG = 22Ω TVJ = 125°C 50 25 0 80 A 120 IC Fig. 7 Typ. turn on energy and switching times versus collector current 4 mJ Eon 3 2 td(on) 80 ns Eon 60 t tr VCE = 300V VGE = ±15V IC = 50A TVJ = 125°C 40 1 20 0 10 20 30 40 50 Ω 60 RG Fig. 9 Typ. turn on energy and switching times versus gate resistor 120 A ICM 90 60 30 RG = 22 Ω TVJ = 125°C 0 0 100 200 300 400 500 600 700 V VCE Fig. 11 Reverse biased safe operating area RBSOA MWI 50-06 A7 MWI 50-06 A7T 4 400 mJ Eoff 3 2 1 Eoff td(off) VCE = 300V VGE = ±15V RG = 22Ω TVJ = 125°C ns 300 t 200 100 tf 00 0 40 80 A 120 IC Fig. 8 Typ. turn off energy and swi.


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