Document
MWI 50-06 A7 MWI 50-06 A7T
IGBT Modules Sixpack
Short Circuit SOA Capability Square RBSOA
Type:
MWI 50-06 A7 MWI 50-06 A7T
NTC - Option:
without NTC with NTC
13
1 2
3 4 17
IC25 = 72 A
V CES
= 600 V
VCE(sat) typ. = 1.9 V
59 6 10
7 11 8 12
T
16 15 14
NTC
T E72873
See outline drawing for pin arrangement
IGBTs
Symbol VCES VGES IC25 IC80 RBSOA
t SC
(SCSOA) Ptot
Symbol
VCE(sat)
V GE(th)
ICES
IGES t
d(on)
tr td(off) tf Eon Eoff Cies QGon R
thJC
Conditions
Maximum Ratings
TVJ = 25°C to 150°C
600 V ± 20 V
TC = 25°C TC = 80°C
72 50
VGE = ±15 V; RG = 22 Ω; TVJ = 125°C Clamped inductive load; L = 100 µH
ICM = 100 VCEK ≤ VCES
V CE
=
V; CES
VGE
=
±15
V;
R G
=
22
Ω;
TVJ
=
125°C
non-repetitive
10
A A A
µs
TC = 25°C
225 W
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified) min. typ. max.
IC = 50 A; VGE = 15 V; TVJ = 25°C TVJ = 125°C
I = 1 mA; V = V
C GE CE
VCE = VCES; VGE = 0 V; TVJ = 25°C TVJ = 125°C
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C VCE = 300 V; IC = 50 A VGE = ±15 V; RG = 22 Ω
1.9 2.4 V 2.2 V
4.5 6.5 V
0.6 mA 0.7 mA
200 nA
50 ns 60 ns 300 ns 30 ns 2.3 mJ 1.7 mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 50 A
(per IGBT)
2800 120
pF nC
0.55 K/W
Features
● NPT IGBT technology ● low saturation voltage ● low switching losses ● switching frequency up to 30 kHz ● square RBSOA, no latch up ● high short circuit capability ● positive temperature coefficient for
easy parallelling ● MOS input, voltage controlled ● ultra fast free wheeling diodes ● solderable pins for PCB mounting ● package with copper base plate
Advantages
● space savings ● reduced protection circuits ● package designed for wave soldering
Typical Applications
● AC motor control ● AC servo and robot drives ● power supplies
IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved
20070912a
1-4
MWI 50-06 A7 MWI 50-06 A7T
Diodes
Symbol IF25 IF80
Conditions
TC = 25°C TC = 80°C
Maximum Ratings
72 A 45 A
Equivalent Circuits for Simulation Conduction
Symbol
VF
IRM trr RthJC
Conditions
IF = 50 A; VGE = 0 V; TVJ = 25°C TVJ = 125°C
IF = 30 A; diF/dt = -500 A/µs; TVJ = 125°C VR = 300 V; VGE = 0 V (per diode)
Characteristic Values min. typ. max.
1.6 1.8 V 1.3 1.5 V
25 A 90 ns
1.19 K/W
IGBT (typ. at VGE = 15 V; TJ = 125°C) V0 = 0.82 V; R0 = 28 mΩ
Free Wheeling Diode (typ. at TJ = 125°C) V0 = 0.89 V; R0 = 8 mΩ
Thermal Response
Temperature Sensor NTC (MWI ... A7T version only)
Symbol
Conditions
R25 B
25/50
Module
Symbol TVJ Tstg VISOL Md
T = 25°C
Conditions IISOL ≤ 1 mA; 50/60 Hz Mounting torque (M5)
Characteristic Values min. typ. max.
4.75 5.0 5.25 kΩ
3375
K
Maximum Ratings
-40...+150 -40...+125
°C °C
2500
V~
2.7 - 3.3
Nm
IGBT (typ.) Cth1 = 0.201 J/K; Rth1 = 0.42 K/W Cth2 = 1.252 J/K; Rth2 = 0.131K/W
Free Wheeling Diode (typ.) Cth1 = 0.116 J/K; Rth1 = 0.973 K/W Cth2 = 0.88 J/K; Rth2 = 0.217 K/W
Dimensions in mm (1 mm = 0.0394")
Symbol
Rpin-chip dS d
A
R thCH
Weight
Conditions
Creepage distance on surface Strike distance in air with heatsink compound
Characteristic Values min. typ. max.
5 mΩ
6 mm 6 mm
0.02 K/W
180 g
IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved
Higher magnification on page B3 - 72
20070912a
2-4
150 12A0 IC
90 60
VGE= 17V 15V 13V
11V
30 9V
TVJ = 25°C
0 0 1 2 3 4 5V6 VCE
Fig. 1 Typ. output characteristics
150
12A0 IC
90
60
TVJ = 125°C
TVJ = 25°C
30
VCE = 20V
0 4 6 8 10 12 14 V 16 VGE
Fig. 3 Typ. transfer characteristics
20 V 15 VGE
10
5
0 0
Fig. 5
VCE = 300V IC = 50A
40 80 120 nC 160 QG
Typ. turn on gate charge
MWI 50-06 A7 MWI 50-06 A7T
150
IC 12A0 90
60
VGE= 17V 15V 13V
11V
9V 30
TVJ = 125°C 0
0 1 2 3 4 5V 6 VCE
Fig. 2 Typ. output characteristics
90
7A5 IF
60
45
TVJ = 125°C
TVJ = 25°C
30
15
0 0.0 0.5 1.0 1.5 V 2.0
VF
Fig. 4 Typ. forward characteristics of free wheeling diode
50 150
4A0 IRM
30
trr
1n2s0 trr 90
20 60
10
IRM
0 0
200
400
600
TVJ = 125°C VR = 300V IF = 30A
30
MWI5006A7
0
8A00/μs 1000
-di/dt
Fig. 6 Typ. turn off characteristics of free wheeling diode
IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved
20070912a
3-4
10.0 mJ
td(on)
100 ns
7.5 Eon
5.0
2.5 Eon
0.0 0
40
75 t
tr
VCE = 300V VGE = ±15V RG = 22Ω TVJ = 125°C
50 25
0 80 A 120
IC
Fig. 7 Typ. turn on energy and switching times versus collector current
4 mJ Eon
3
2
td(on)
80
ns Eon
60 t
tr
VCE = 300V VGE = ±15V IC = 50A TVJ = 125°C
40
1 20 0 10 20 30 40 50 Ω 60 RG
Fig. 9 Typ. turn on energy and switching times versus gate resistor
120 A
ICM 90
60
30
RG = 22 Ω TVJ = 125°C
0 0 100 200 300 400 500 600 700 V VCE
Fig. 11 Reverse biased safe operating area RBSOA
MWI 50-06 A7 MWI 50-06 A7T
4 400
mJ Eoff 3
2
1
Eoff
td(off)
VCE = 300V VGE = ±15V RG = 22Ω TVJ = 125°C
ns 300
t
200
100
tf 00
0 40 80 A 120
IC
Fig. 8 Typ. turn off energy and swi.