IGBT Boost Chopper
IGBT Boost Chopper
in ISOPLUS i4-PAC™
FID 60-06D
IC25 = 65 A VCES = 600 V VCE(sat) typ. = 1.6 V
3
4
1 E72873
2
...
Description
IGBT Boost Chopper
in ISOPLUS i4-PAC™
FID 60-06D
IC25 = 65 A VCES = 600 V VCE(sat) typ. = 1.6 V
3
4
1 E72873
2
IGBT Symbol VCES VGES
IC25 IC90 ICM VCEK tSC (SCSOA) Ptot
Conditions TVJ = 25°C to 150°C
TC = 25°C TC = 90°C VGE = ±15 V; RG = 22 Ω; TVJ = 125°C RBSOA Clamped inductive load; L = 100 µH VCE = VCES; VGE = ±15 V; RG = 22 Ω TVJ = 125°C; non-repetitive TC = 25°C
Maximum Ratings 600 V ± 20 V
65 40
100 VCES
10
A A A
µs
200 W
Symbol
VCE(sat)
VGE(th) ICES
IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC RthJH
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified) min. typ. max.
IC = 30 A; VGE = 15 V IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V VCE = 0 V; VGE = ± 20 V
TVJ = 25°C TVJ = 125°C TVJ = 25°C TVJ = 125°C
Inductive load VCE = 300 V; IC = 30 A VGE = ±15 V; RG = 22 Ω
TVJ = 125°C
1.6 1.8 4.5
0.1
50 60 300 30 1.0 1.4
2.0 V V
6.5 V
0.1 mA mA
200 nA
ns ns ns ns mJ mJ
VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300 V; VGE = 15 V; IC = 50 A
with heatsink compound
2.8 nF
120 nC
0.6 K/W 1.2 K/W
Features
NPT IGBT technology - low saturation voltage with positive temperature coefficient - fast switching - wide safe operating area HiPerFRED™ diode - fast reverse recovery - low operating forward voltage - low leakage current ISOPLUS i4-PAC™ package - isolated back surface - low coupling capacity between pins and heatsink - enlarged creepage towards heatsink - application friendly pinout - low induc...
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