L74VHC1G00

LESHAN RADIO COMPANY, LTD. 2–Input NAND Gate L74VHC1G00 The L74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation. The internal circuit is composed of multiple stages, including a buffer output which provides high noise immunity and stable output. The L74VHC1G00 input structure provides protection when voltages up to 7 V are applied, regardless of the supply voltage. This allows the L74VHC1G00 to be used to interface 5 V circuits to 3 V circuits. High Speed: t PD = 3.0 ns (Typ) at V CC = 5 V Low Power Dissipation: I CC = 2 mA (Max) at T A = 25°C Power Down Protection Provided on Inputs Balanced Propagation Delays Pin and Function Compatible with Other Standard Logic Families 5 4 1 2 3 SC–70/SC–88A/SOT–353 DF SUFFIX 5 4 1 2 3 SOT–23/TSOP–5/SC–59 DT SUFFIX MARKING DIAGRAMS V1d Pin 1 d = Date Code V1d Pin 1 d = Date Code Figure 1. Pinout (Top View) Figure 2. Logic Symbol PIN ASSIGNMENT 1 IN B 2 IN A 3 GND 4 OUT Y 5 VCC FUNCTION TABLE Inputs A L L H H B L H L H Output Y H H H L ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. 1/6 LESHAN RADIO COMPANY, LTD. L74VHC1G00 MAXIMUM RATINGS Symbol Parameter Value Unit V CC V IN V OUT I IK I OK I OUT I CC T STG TL TJ θ JA DC Supply Voltage DC Input ...