MCH3376

Ordering number : ENA1564B MCH3376 Power MOSFET –20V, 241mΩ, –1.5A, Single P-Channel http://onsemi.com Features ESD diode-Protected gate High speed switching and Low loss Pb-free and RoHS Compliance Drive at low voltage:1.8V drive Low RDS(on) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Power Dissipation Junction Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tj Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) Ratings --20 ±10 --1.5 --6 0.8 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. Package Dimensions unit : mm (typ) 7019A-003 2.0 0.15 MCH3376-TL-E MCH3376-TL-W Product & Package Information Package : MCPH3 JEITA, JEDEC : SC-70, SOT-323 Minimum Packing Quantity : 3,000 pcs./reel Packing Type: TL Marking 3 0 to 0.02 QH 2.1 1.6 0.25 LOT No. LOT No. 0.85 0.25 12 0.65 0.3 1 : Gate 2 : Source 3 : Drain MCPH3 TL Electrical Connection 3 1 0.07 2 ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2014 July, 2014 72814HK TC-00003112/60612TKIM/O1409TKIM PE No. A1564-1/5 MCH3...