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C6000

Toshiba Semiconductor

2SC6000


Description
TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC6000 High Speed Switching Applications DC-DC Converter Applications 2SC6000 Unit: mm High DC current gain: hFE = 250 to 400 (IC = 2.5 A) Low collector-emitter saturation: VCE (sat) = 0.18 V (max) High speed switching: tf = 13 ns (typ) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rati...



Toshiba Semiconductor

C6000

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