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TH58NVG4S0FBAID
16 GBIT (2G x 8 BIT) CMOS NAND E2PROM
Description
TH58NVG4S0FBAID TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 16 GBIT (2G × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TH58NVG4S0FBAID is a single 3.3V 16 Gbit (18,152,947,712 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 8192 blocks. The device has two 4328-byte static ...
Toshiba
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TH58NVG4S0FBAID
16 GBIT (2G x 8 BIT) CMOS NAND E2PROM
- Toshiba
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