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TC58NYG1S3HBAI4
2 GBIT (256M x 8 BIT) CMOS NAND E2PROM
Description
TC58NYG1S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 GBIT (256M 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NYG1S3HBAI4 is a single 1.8V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 128) bytes 64 pages 2048blocks. The device has two 2176-byte static re...
Toshiba
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