Document
TC58NYG2S0HBAI4
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
4 GBIT (512M × 8 BIT) CMOS NAND E2PROM
DESCRIPTION
The TC58NYG2S0HBAI4 is a single 1.8V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks. The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 16 Kbytes: 4352 bytes × 64 pages).
The TC58NYG2S0HBAI4 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage.
FEATURES
• Organization
Memory cell array Register Page size Block size
x8 4352 × 128K × 8 4352 × 8 4352 bytes (256K + 16K) bytes
• Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read
• Mode control Serial input/output
Command control
• Number of valid blocks Min 2008 blocks Max 2048 blocks
• Power supply VCC = 1.7V to 1.95V
• Access time
Cell array to register 25 µs max
Serial Read Cycle
25 ns min (CL=30pF)
• Program/Erase time Auto Page Program Auto Block Erase
300 µs/page typ. 3.5 ms/block typ.
• Operating current Read (25 ns cycle) Program (avg.)
Erase (avg.) Standby
30 mA max. 30 mA max
30 mA max 50 µA max
• Package P-TFBGA63-0911-0.80CZ (Weight: 0.15 g typ.)
• 8 bit ECC for each 512Byte is required.
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PIN ASSIGNMENT (TOP VIEW)
1 2 3 4 5 6 7 8 9 10
A NC NC B NC
NC NC NC NC
C WP ALE VSS CE WE RY/BY D NC RE CLE NC NC NC E NC NC NC NC NC NC
F NC NC NC NC NC NC
G NC NC NC NC NC NC
H NC I/O1 NC NC NC VCC
J NC I/O2 NC VCC I/O6 I/O8
K VSS I/O3 I/O4 I/O5 I/O7 VSS
L NC NC
NC NC
M NC NC
NC NC
PIN NAMES
I/O1 to I/O8 CE WE RE CLE ALE WP
RY/BY VCC VSS NC
I/O port Chip enable Write enable Read enable Command latch enable Address latch enable Write protect Ready/Busy Power supply Ground No Connection
TC58NYG2S0HBAI4
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BLOCK DIAGRAM
I/O1 to I/O8
CE CLE ALE WE
RE WP
RY / BY
I/O Control circuit
Logic control
RY / BY
Status register Address register Command register
Control circuit
TC58NYG2S0HBAI4
VCC VSS
Column buffer Column decoder
Data register Sense amp
Memory cell array
Row address buffer decoder
Row address decoder
HV generator
ABSOLUTE MAXIMUM RATINGS
SYMBOL
RATING
VCC VIN VI/O PD TSOLDER TSTG TOPR
Power Supply Voltage Input Voltage Input /Output Voltage Power Dissipation Soldering Temperature (10 s) Storage Temperature Operating Temperature
VALUE −0.6 to 2.5 −0.6 to 2.5 −0.6 to V.