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TC58NYG2S0HBAI4 Dataheets PDF



Part Number TC58NYG2S0HBAI4
Manufacturers Toshiba
Logo Toshiba
Description 4 GBIT (512M x 8 BIT) CMOS NAND E2PROM
Datasheet TC58NYG2S0HBAI4 DatasheetTC58NYG2S0HBAI4 Datasheet (PDF)

TC58NYG2S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NYG2S0HBAI4 is a single 1.8V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks. The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Eras.

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TC58NYG2S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 4 GBIT (512M × 8 BIT) CMOS NAND E2PROM DESCRIPTION The TC58NYG2S0HBAI4 is a single 1.8V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks. The device has two 4352-byte static registers which allow program and read data to be transferred between the register and the memory cell array in 4352-byte increments. The Erase operation is implemented in a single block unit (256 Kbytes + 16 Kbytes: 4352 bytes × 64 pages). The TC58NYG2S0HBAI4 is a serial-type memory device which utilizes the I/O pins for both address and data input/output as well as for command inputs. The Erase and Program operations are automatically executed making the device most suitable for applications such as solid-state file storage, voice recording, image file memory for still cameras and other systems which require high-density non-volatile memory data storage. FEATURES • Organization Memory cell array Register Page size Block size x8 4352 × 128K × 8 4352 × 8 4352 bytes (256K + 16K) bytes • Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read • Mode control Serial input/output Command control • Number of valid blocks Min 2008 blocks Max 2048 blocks • Power supply VCC = 1.7V to 1.95V • Access time Cell array to register 25 µs max Serial Read Cycle 25 ns min (CL=30pF) • Program/Erase time Auto Page Program Auto Block Erase 300 µs/page typ. 3.5 ms/block typ. • Operating current Read (25 ns cycle) Program (avg.) Erase (avg.) Standby 30 mA max. 30 mA max 30 mA max 50 µA max • Package P-TFBGA63-0911-0.80CZ (Weight: 0.15 g typ.) • 8 bit ECC for each 512Byte is required. 1 2013-07-05C PIN ASSIGNMENT (TOP VIEW) 1 2 3 4 5 6 7 8 9 10 A NC NC B NC NC NC NC NC C WP ALE VSS CE WE RY/BY D NC RE CLE NC NC NC E NC NC NC NC NC NC F NC NC NC NC NC NC G NC NC NC NC NC NC H NC I/O1 NC NC NC VCC J NC I/O2 NC VCC I/O6 I/O8 K VSS I/O3 I/O4 I/O5 I/O7 VSS L NC NC NC NC M NC NC NC NC PIN NAMES I/O1 to I/O8 CE WE RE CLE ALE WP RY/BY VCC VSS NC I/O port Chip enable Write enable Read enable Command latch enable Address latch enable Write protect Ready/Busy Power supply Ground No Connection TC58NYG2S0HBAI4 2 2013-07-05C BLOCK DIAGRAM I/O1 to I/O8 CE CLE ALE WE RE WP RY / BY I/O Control circuit Logic control RY / BY Status register Address register Command register Control circuit TC58NYG2S0HBAI4 VCC VSS Column buffer Column decoder Data register Sense amp Memory cell array Row address buffer decoder Row address decoder HV generator ABSOLUTE MAXIMUM RATINGS SYMBOL RATING VCC VIN VI/O PD TSOLDER TSTG TOPR Power Supply Voltage Input Voltage Input /Output Voltage Power Dissipation Soldering Temperature (10 s) Storage Temperature Operating Temperature VALUE −0.6 to 2.5 −0.6 to 2.5 −0.6 to V.


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