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H5N2522FP-E0-E

Renesas Technology

High Speed Power Switching MOS FET


Description
H5N2522FP-E0-E 250V - 12A - MOS FET High Speed Power Switching Features  Low on-resistance RDS(on) = 0.13  typ. (at ID = 6 A, VGS = 10 V, Ta = 25C)  Low leakage current  High speed switching  Built-in fast recovery diode Outline RENESAS Package code: PRSS0003AG-A (Package name: TO-220FP) 1 23 Absolute Maximum Ratings Item Drain to Source voltage Gate ...



Renesas Technology

H5N2522FP-E0-E

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